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1. DE000010223202 - Photodiode

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Office
Allemagne
Numéro de la demande 10223202
Date de la demande 24.05.2002
Numéro de publication 000010223202
Date de publication 11.12.2003
Type de publication A1
CIB
H01L 31/103
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
08dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
10caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
101Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
102caractérisés par une seule barrière de potentiel ou de surface
103la barrière de potentiel étant du type PN à homojonction
CPC
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
H01L 31/035281
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
035281Shape of the body
H01L 31/103
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
103the potential barrier being of the PN homojunction type
Y10S 257/927
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
257Active solid-state devices, e.g. transistors, solid-state diodes
927Different doping levels in different parts of PN junction to produce shaped depletion layer
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Déposants FRAUNHOFER GES FORSCHUNG
Inventeurs HEHEMANN INGO
KEMNA ARMIN
Titre
(DE) Photodiode
front page image
Abrégé
(DE)

Eine Photodiode umfaßt neben einem Halbleitersubstrat und einem photoempfindlichen Bereich in dem Halbleitersubstrat, der einen Raumladungszonenbereich zum Erzeugen eines Diffusionsstromanteils und einen Diffusionsbereich zum Erzeugen eines Diffusionsstromanteils aufweist, eine Isolationseinrichtung in dem Halbleitersubstrat zum zumindest teilweisen Eingrenzen des Diffusonsbereichs gegenüber einem angrenzenden Umgebungsbereich des Halbleitersubstrats. Die Verringerung der Bandbreite von Photodioden durch das Verschmieren der Antwort der Photodiode durch den Diffusionsstrom wird dadurch gemindert, daß eine Isolationseinrichtung in dem Halbleitersubstrat vorgesehen wird, welche den Diffusionsbereich gegenüber dem umgebenden Halbleitersubstrat eingrenzt und hierdurch einerseits die Anzahl von zum Diffusionsanteil beitragenden Ladungsträgern dadurch verringert, daß der Diffusionsbereich, in welchem die diffundierenden Ladungsträger erzeugt werden, verringert wird, und andererseits dadurch, daß in dem verkleinerten Diffusionsbereich erzeugte diffundierende Ladungsträger durch die Isolationseinrichtung "abgesaugt" werden, weshalb dieselben nicht zum Photostrom beitragen.
Documents de brevet associés
EP1508173
EP1739756
JP2005536035
WO/2003/100871
US20050156182
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