Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

Aller à Demande

1. CN103011049 - 制造提供气隙控制的微机电系统装置的方法

Office
Chine
Numéro de la demande 201210397799.3
Date de la demande 16.05.2007
Numéro de publication 103011049
Date de publication 03.04.2013
Type de publication A
CIB
B81B 3/00
BTECHNIQUES INDUSTRIELLES; TRANSPORTS
81TECHNOLOGIE DES MICROSTRUCTURES
BDISPOSITIFS OU SYSTÈMES À MICROSTRUCTURE, p.ex. DISPOSITIFS MICROMÉCANIQUES
3Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
CPC
B81B 3/0072
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
0064Constitution or structural means for improving or controlling the physical properties of a device
0067Mechanical properties
0072For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
B81B 2201/042
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
04Optical MEMS
042Micromirrors, not used as optical switches
B81C 1/00047
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00023without movable or flexible elements
00047Cavities
B81C 2201/0167
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0161Controlling physical properties of the material
0163Controlling internal stress of deposited layers
0167by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
Déposants 高通MEMS科技公司
Inventeurs 董明皓
利奥尔·科格特
Mandataires 北京律盟知识产权代理有限责任公司 11287
Données relatives à la priorité 11478702 30.06.2006 US
Titre
(ZH) 制造提供气隙控制的微机电系统装置的方法
Abrégé
(ZH)

本发明提供用于控制光调制装置的两个层之间的腔的深度的方法和设备。一种制造光调制装置的方法包括:提供衬底;在所述衬底的至少一部分上方形成牺牲层;在所述牺牲层的至少一部分上方形成反射层;以及在所述衬底上方形成一个或一个以上挠曲控制器,所述挠曲控制器经配置以可操作地支撑所述反射层,且在移除所述牺牲层时,形成深度可测量地不同于所述牺牲层的厚度的腔,其中垂直于所述衬底测量所述深度。