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1. CN102158184 - Power amplifier tube and power amplification method

Office
Chine
Numéro de la demande 201110110892.7
Date de la demande 29.04.2011
Numéro de publication 102158184
Date de publication 17.08.2011
Type de publication A
CIB
H03F 3/20
HÉLECTRICITÉ
03CIRCUITS ÉLECTRONIQUES FONDAMENTAUX
FAMPLIFICATEURS
3Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs
20Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C
CPC
H03F 1/0288
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
0205in transistor amplifiers
0288using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
H03F 3/195
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
195in integrated circuits
H03F 3/245
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
24of transmitter output stages
245with semiconductor devices only
H03F 3/193
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
193with field-effect devices
H03F 3/68
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
Déposants ZTE Corporation
中兴通讯股份有限公司
Inventeurs He Gang
何钢
Chen Huozhang
陈化璋
Cui Xiaojun
崔晓俊
Mandataires li jian long hong
北京安信方达知识产权代理有限公司 11262
北京安信方达知识产权代理有限公司 11262
Titre
(EN) Power amplifier tube and power amplification method
(ZH) 一种功率放大管以及功率放大方法
Abrégé
(EN) The invention discloses a power amplifier tube and a power amplification method. The power amplifier tube comprises a peak power amplifier and a carrier amplifier, wherein the peak power amplifier and the carrier amplifier respectively integrate the same encapsulation in which the power amplifier tube is positioned; and one or multiple amplifiers in the peak power amplifier and the carrier amplifier in the power amplifier tube are used for amplifying signal power by adopting a high voltage heterojunction bipolar transistor (HVHBT) component, and other amplifiers are used for amplifying the signal power by adopting a high electron mobility transistor (HEMT) component. The power amplifier tube and power amplification method provided by the invention can be applied to a Doherty amplifier, and the power amplifier tube is designed by adopting a groundbreaking brand-new power amplifier tube core combination mode. Compared with the Doherty amplifiers adopting power amplifier tube cores of a laterally diffused metal oxide semiconductor (LDMOS), the power amplification with high efficiency can be realized on the basis of ensuring the small volume of the power amplifier tube.
(ZH)

本发明公开了一种功率放大管以及功率放大方法,本功率放大管包括峰值功放器和主功放器,所述峰值功放器和主功放器均集成所述功率放大管所在的同一封装;所述功率放大管中峰值功放器和主功放器中的一个或多个放大器用于采用高压异质结双极晶体管(HVHBT)器件进行信号功率放大,其它放大器用于采用高电子迁移率晶体管(HEMT)器件进行信号功率放大。本发明应用于Doherty放大器,采用突破性的全新功放管芯组合方式设计功率管,与现有的全部采用LDMOS的功放管芯的Doherty放大器相比,可在保证功率放大管的小体积基础上实现高效率的功率放大。


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