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1. CN1777842 - Resist composition and organic solvent for removing resist

Office Chine
Numéro de la demande 200480010756.9
Date de la demande 23.04.2004
Numéro de publication 1777842
Date de publication 24.05.2006
Numéro de délivrance 100541338
Date de délivrance 16.09.2009
Type de publication C
CIB
G03F 7/42
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
26Traitement des matériaux photosensibles; Appareillages à cet effet
42Elimination des réserves ou agents à cet effet
CPC
G03F 7/0226
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
0226characterised by the non-macromolecular additives
G03F 7/0048
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0048characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
Déposants AZ Electronic Materials Japan
AZ电子材料(日本)株式会社
Inventeurs Kang Doek-man
姜德万
Oh Sae-tae
吴世泰
Kwon Hyuk-joong
权赫重
Naito Eiji
内藤荣治
Mandataires liu jiyang
北京三幸商标专利事务所
Données relatives à la priorité 10-2003-0026029 24.04.2003 KR
Titre
(EN) Resist composition and organic solvent for removing resist
(ZH) 抗蚀剂组合物以及用于除去抗蚀剂的有机溶剂
Abrégé
(EN)
The present invention provides a resist composition comprising benzyl alcohol or its derivatives as an organic solvent. The present invention also provides an organic solvent for removing a resist, wherein the organic solvent comprises benzyl alcohol or its derivatives. The resist composition of the present invention is used in a lithography process for forming a micro -pattern using a difference in the solubility between the irradiated part and the non-irradiated part by irradiation with UV rays to greatly improve the uniformity of the film thickness upon coating of the thin film. In addition, the organic solvent according to the present invention can be used to wash the device, which comes into contact with the photosensitive material in the course of the microcircuit forming process, by removing the photosensitive material from the device. It also can remove the photosensitive material remaining on the undesired parts of the substrate on which the photosensitive material is coated.

(ZH)

本发明提供了一种包含苯甲醇或其衍生物作为有机溶剂的抗蚀剂组合物。本发明还提供了一种用于除去抗蚀剂的有机溶剂,其中该有机溶剂包含苯甲醇或其衍生物。利用由UV射线辐射的辐射部分和非辐射部分之间的溶解度差异,本发明的抗蚀剂组合物被应用于形成微图案的平版印刷工艺中在涂布薄膜的时候极大地改进薄膜厚度的均匀度。此外,通过从装置上除去光敏材料,根据本发明的有机溶剂可以用来清洗在微电路形成过程中与光敏材料接触的装置。其还可以除去残留在光敏材料所涂布的基底的不希望部分上的光敏材料。

Également publié en tant que
US2006263714
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