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1. CN1729537 - Magnetoresistive random access memory with reduced switching field

Office
Chine
Numéro de la demande 03814154.X
Date de la demande 04.06.2003
Numéro de publication 1729537
Date de publication 01.02.2006
Numéro de délivrance 1729537
Date de délivrance 28.04.2010
Type de publication B
CIB
G11C 11/15
GPHYSIQUE
11ENREGISTREMENT DE L'INFORMATION
CMÉMOIRES STATIQUES
11Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants
02utilisant des éléments magnétiques
14utilisant des éléments à pellicules minces
15utilisant des couches magnétiques multiples
G11C 11/16
GPHYSIQUE
11ENREGISTREMENT DE L'INFORMATION
CMÉMOIRES STATIQUES
11Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants
02utilisant des éléments magnétiques
16utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 27/222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
222Magnetic non-volatile memory structures, e.g. MRAM
Déposants Freescale Semiconductor Inc.
艾沃思宾技术公司
Inventeurs Engel Bradley N.
布莱德雷·N·恩格尔
Janesky Jason Allen
贾森·阿兰·詹尼斯基
Rizzo Nicholas D.
尼古拉斯·D·里佐
Mandataires fu jianjun
中国国际贸易促进委员会专利商标事务所 11038
Données relatives à la priorité 10173907 18.06.2002 US
Titre
(EN) Magnetoresistive random access memory with reduced switching field
(ZH) 具有减小的翻转磁场的磁致电阻随机存取存储器
Abrégé
(EN) The present invention provides a magnetoresistive tunneling junction memory cell (10) comprising a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.
(ZH)

一种磁致电阻隧道结存储单元(10)包括钉扎铁磁性区域(17)、电绝缘材料以及自由铁磁性区域(15),钉扎铁磁性区域具有一个在没有施加磁场时固定在一优选方向上的磁矩向量(47),其中该钉扎铁磁性区域具有磁边缘场(96),电绝缘材料设置在该钉扎铁磁性区域上以形成磁致电阻隧道结(16),以及自由铁磁性区域具有在一位置上取向为平行或反向平行于钉扎铁磁性区域的磁矩向量的磁矩向量(53),其中选择该磁边缘场以获得预想的翻转磁场。