(EN)
The present invention provides a magnetoresistive tunneling junction memory cell (10) comprising a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.
(ZH) 一种磁致电阻隧道结存储单元(10)包括钉扎铁磁性区域(17)、电绝缘材料以及自由铁磁性区域(15)，钉扎铁磁性区域具有一个在没有施加磁场时固定在一优选方向上的磁矩向量(47)，其中该钉扎铁磁性区域具有磁边缘场(96)，电绝缘材料设置在该钉扎铁磁性区域上以形成磁致电阻隧道结(16)，以及自由铁磁性区域具有在一位置上取向为平行或反向平行于钉扎铁磁性区域的磁矩向量的磁矩向量(53)，其中选择该磁边缘场以获得预想的翻转磁场。
