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1. CN1656623 - Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method

Office
Chine
Numéro de la demande 03812317.7
Date de la demande 29.05.2003
Numéro de publication 1656623
Date de publication 17.08.2005
Type de publication A
CIB
H01L 41/24
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
41Dispositifs piézo-électriques en général; Dispositifs électrostrictifs en général; Dispositifs magnétostrictifs en général; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
22Procédés ou appareils spécialement adaptés à l'assemblage, la fabrication ou au traitement de dispositifs piézo-électriques ou électrostrictifs, ou de leurs parties constitutives
24d'éléments à composition céramique
H01L 41/08
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
41Dispositifs piézo-électriques en général; Dispositifs électrostrictifs en général; Dispositifs magnétostrictifs en général; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
08Eléments piézo-électriques ou électrostrictifs
CPC
H01L 41/316
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
316by vapour phase deposition
Y10T 29/42
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
42Piezoelectric device making
Déposants Nat Inst of Advanced Ind Scien
独立行政法人产业技术综合研究所
Inventeurs Akiyama Morito
秋山守人
Ueno Naohiro
上野直广
Tateyama Hiroshi
立山博
Sunagawa Yoshitaka
砂川佳敬
Umeuchi Yoshihiro
梅内芳浩
Jinushi Keiichiro
地主启一郎
Mandataires li hui
北京三友知识产权代理有限公司
Données relatives à la priorité 2002160568 31.05.2002 JP
Titre
(EN) Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method
(ZH) 使用超高取向氮化铝薄膜的压电元件及其制造方法
Abrégé
(EN) The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5 DEG . A high-performance piezoelectric device comprising an aluminum nitride thin film ultrahighly oriented along the c axis and free of hillock, crack, and separation by forming a lower electrode of a W layer on an inexpensive substrate such as a glass substrate without providing any adherent layer between them. The piezoelectric device free of hillock, crack, and separation and having a multilayer structure in which a lower electrode, a piezoelectric thin film, and an upper electrode are formed over a substrate is characterized in that the lower electrode is formed of an oriented W layer the (111)-plane of W of which is parallel to the substrate, and the piezoelectric thin film is an aluminum nitride thin film having a rocking curve half width (RCFWHM) of 2.5 DEG or less and oriented along the c axis.
(ZH)

一种使用超高取向氮化铝薄膜的压电元件及其制造方法。本发明的目的在于,提供一种在玻璃基板等廉价的基板上不介入密接层而直接由W层形成下部电极,由此形成没有隆起或裂纹或剥离、而且构成c轴超高取向的氮化铝薄膜的高性能的压电元件。本发明的使用超高取向氮化铝薄膜的压电元件具有在基板上顺序形成下部电极、压电体薄膜、上部电极的叠层结构,并且没有隆起、裂纹或剥离,其特征在于,下部电极由W的(111)面与基板面平行的取向性W层形成,而且压电体薄膜由摇摆曲线半价宽度(RCFWHM)为小于等于2.5°的c轴取向氮化铝薄膜形成。