(EN) The invention provides a semiconductor light-emitting element. The semiconductor light-emitting element comprises a semiconductor epitaxial laminated layer, which is provided with a first surface and a second surface opposite to the first surface, and comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer positioned between the first conductive type semiconductor layer and the second conductive type semiconductor layer; the first electrode and the second electrode are located on the first surface of the semiconductor epitaxial laminated layer and are electrically connected with the first conductive type semiconductor layer and the second conductive type semiconductor layer respectively; the insulating layers are positioned between the first electrode and the semiconductor epitaxial laminated layer and between the second electrode and the semiconductor epitaxial laminated layer; the element is characterized by further comprising an anti-thimble buffer layer which is located between the insulating layer and the second conductive type semiconductor layer. Through the design of the anti-thimble buffer layer, the semiconductor light-emitting element can be prevented from being damaged by the thimble in the packaging process, the semiconductor light-emitting element is effectively protected, and the product yield of the semiconductor light-emitting element is improved.
(ZH) 本发明提供一种半导体发光元件，包含半导体外延叠层，具有第一表面和与第一表面相对的第二表面，包括第一导电类型半导体层、第二导电类型半导体层和位于第一导电类型半导体层和第二导电类型半导体层之间的活性层；第一电极和第二电极，位于半导体外延叠层的第一表面之上，分别与第一导电类型半导体层和第二导电类型半导体层进行电连接；绝缘层：位于第一电极和半导体外延叠层之间及第二电极和半导体外延叠层之间；其特征在于：还包括防顶针缓冲层，其位于绝缘层和第二导电类型半导体层之间。本发明通过防顶针缓冲层的设计，可避免封装过程中顶针顶伤半导体发光元件，有效地保护半导体发光元件，提升半导体发光元件的产品良率。
