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1. CN112437969 - Gas Supply With Angled Injectors In Plasma Processing Apparatus

Office
Chine
Numéro de la demande 202080003859.1
Date de la demande 05.02.2020
Numéro de publication 112437969
Date de publication 02.03.2021
Type de publication A
CIB
H01J 37/32
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
JTUBES À DÉCHARGE ÉLECTRIQUE OU LAMPES À DÉCHARGE ÉLECTRIQUE
37Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p.ex. pour y subir un examen ou un traitement
32Tubes à décharge en atmosphère gazeuse
CPC
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
H01J 37/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3244Gas supply means
H01J 37/32715
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32715Workpiece holder
H01J 2237/006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece,
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
Déposants MATTSON TECHNOLOGY, INC.
玛特森技术公司
BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD.
北京屹唐半导体科技有限公司
Inventeurs WANG TINGHAO F
T·F·王
MA YORKMAN
Y·马
YANG YUN
楊雲
MA SHAWMING
马绍铭
KIM MOO-HYUN
M-H·基姆
LEMBESIS PETER J
P·J·伦贝西斯
PAKULSKI RYAN M
瑞安·M·帕库尔斯基
Mandataires 北京市铸成律师事务所 11313
北京市铸成律师事务所 11313
Données relatives à la priorité 16270063 07.02.2019 US
Titre
(EN) Gas Supply With Angled Injectors In Plasma Processing Apparatus
(ZH) 等离子体处理设备中具有成角度的喷嘴的气体供给装置
Abrégé
(EN)
Plasma processing apparatus and associated methods are provided. In one example implementation, the plasma processing apparatus can include a gas supply in a processing chamber of a plasma processingapparatus, such as an inductively coupled plasma processing apparatus. The gas supply can include one or more injectors. Each of the one or more injectors can be angled relative to a direction parallel to a radius of the workpiece to produce a rotational gas flow relative to a direction perpendicular to a center of the workpiece. Such gas supply can improve process uniformity, workpiece edge critical dimension tuning, gas ionization efficiency, and/or symmetric flow inside the processing chamber to reduce particle deposition on a workpiece and can also reduce heat localization from a stagnateflow.

(ZH)
提供了等离子体处理设备和相关的方法。在一个示例实施方式中,所述等离子体处理设备可包括位于等离子体处理设备的处理腔室中的气体供给装置,例如感应耦合等离子体处理设备。该气体供给装置可包括一个或多个喷嘴。所述一个或多个喷嘴中的每一个可相对于与工件半径平行的方向成角度,以产生与所述工件中心垂直方向的旋转气流。这样的气体供给装置可改善工艺均匀性、工件边缘关键尺寸调节、气体离子化效率和/或所述处理腔室中的对称流,以减少工件上的颗粒沉积,并且还可以降低来自停滞流的热积聚。

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