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1. CN110112284 - Flexible acoustoelectric substrate and preparation method thereof, and flexible acoustoelectric device

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Office
Chine
Numéro de la demande 201910447022.5
Date de la demande 27.05.2019
Numéro de publication 110112284
Date de publication 09.08.2019
Numéro de délivrance 110112284
Date de délivrance 17.09.2021
Type de publication B
CIB
H01L 41/22
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
41Dispositifs piézo-électriques en général; Dispositifs électrostrictifs en général; Dispositifs magnétostrictifs en général; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
22Procédés ou appareils spécialement adaptés à l'assemblage, la fabrication ou au traitement de dispositifs piézo-électriques ou électrostrictifs, ou de leurs parties constitutives
H01L 41/09
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
41Dispositifs piézo-électriques en général; Dispositifs électrostrictifs en général; Dispositifs magnétostrictifs en général; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
08Eléments piézo-électriques ou électrostrictifs
09à entrée électrique et sortie mécanique
CPC
H01L 41/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
H01L 41/0973
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
0926using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
0973Membrane type
H01L 41/081
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
0805based on piezo-electric or electrostrictive films or coatings
081characterised by the underlying base, e.g. substrates
H01L 27/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
20including piezo-electric components; including electrostrictive components; including magnetostrictive components
H01L 41/187
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
H01L 41/1876
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
1875Lead based oxides
1876Lead zirconate titanate based
Déposants BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventeurs HAN YANLING
韩艳玲
DONG XUE
董学
WANG HAISHENG
王海生
LIU YINGMING
刘英明
ZHAO LIJUN
赵利军
GUO YUZHEN
郭玉珍
LI PEIXIAO
李佩笑
JI YAQIAN
姬雅倩
ZHANG CHENYANG
张晨阳
LI XIUFENG
李秀锋
Mandataires 北京安信方达知识产权代理有限公司 11262
北京安信方达知识产权代理有限公司 11262
Titre
(EN) Flexible acoustoelectric substrate and preparation method thereof, and flexible acoustoelectric device
(ZH) 柔性声电基板及其制备方法、柔性声电装置
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Abrégé
(EN) The embodiment of the invention provides a flexible acoustoelectric substrate and a preparation method thereof and a flexible acoustoelectric device. The preparation method of the flexible acoustoelectric substrate comprises the steps of: forming a flexible substrate; forming a plurality of piezoelectric components which are regularly arranged on the flexible substrate; and etching the flexible substrate by adopting inductive coupling plasma to form cavities corresponding to the piezoelectric components one by one. According to the invention, the cavities are formed in the flexible substrate in an inductive coupling plasma etching mode, the etching uniformity of the cavities is good, no etching residue is generated, the process is easy to implement, and the defects of low yield and complexprocess implementation of the method in the prior art are effectively overcome.
(ZH) 本发明实施例提供一种柔性声电基板及其制备方法、柔性声电装置。柔性声电基板的制备方法包括：形成柔性基底；在所述柔性基底上形成规则排布的多个压电组件；采用感应耦合等离子体刻蚀所述柔性基底，形成与所述多个压电组件一一对应的腔室。本发明通过感应耦合等离子体刻蚀方式在柔性基底内形成腔室，腔室的刻蚀均匀性好，无刻蚀残留，易于工艺实现，有效解决了现有方法存在良品率低、工艺实现复杂等缺陷。
Documents de brevet associés
WO/2020/238696
US20220037585
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