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1. CN109494182 - Method for holding ultrathin semiconductor wafer in semiconductor integration process

Office Chine
Numéro de la demande 201811413696.5
Date de la demande 26.11.2018
Numéro de publication 109494182
Date de publication 19.03.2019
Type de publication A
CIB
H01L 21/683
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
67Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
683pour le maintien ou la préhension
CPC
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68359
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68359used as a support during manufacture of interconnect decals or build up layers
H01L 2221/68381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Déposants NANJING ZHONGDIAN XINGU HIGH FREQUENCY DEVICE INDUSTRY TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
南京中电芯谷高频器件产业技术研究院有限公司
Inventeurs DAI JIAYUN
戴家赟
WU LISHU
吴立枢
WANG FEI
王飞
GUO HUAIXIN
郭怀新
CHEN TANGSHENG
陈堂胜
Mandataires 南京理工大学专利中心 32203
Titre
(EN) Method for holding ultrathin semiconductor wafer in semiconductor integration process
(ZH) 一种用于半导体集成工艺中超薄半导体晶圆的拿持方法
Abrégé
(EN)
The invention discloses a method for holding an ultrathin semiconductor wafer in a semiconductor integration process. The method comprises steps of 1) spin-coating the front side of a first temporarycarrier with a first temporary bonding adhesive; 2) oppositely bonding the ultrathin semiconductor wafer to the front side of the first temporary carrier; 3) spin-coating the front side of a second temporary carrier with a second temporary bonding adhesive; 4) oppositely bonding the ultrathin semiconductor wafer to the front side of the second temporary carrier; 5) separating the ultrathin semiconductor wafer from the first temporary carrier; 6) preparing an integrated interconnection structure; 7) performing a bonding integration process; and 8) separating the integrated wafer from the secondcarrier. The method, by means of the matching of the two temporary bonding adhesives having different softening temperatures and two temporary carriers and by using uses temporary bonding and debonding processes, ensures that the ultrathin semiconductor wafer is supported by the temporary carriers in transmission, clamping, interconnection structure manufacture, and a three-dimensional integration process such as bonding, and reduces the facture risk in the integrated process.

(ZH)
本发明公开了一种用于半导体集成工艺中超薄半导体晶圆的拿持方法,主要步骤有:1)在第一临时载片正面旋涂第一临时键合粘附剂;2)将超薄半导体晶圆与第一临时载片正面相对键合;3)在第二临时载片正面旋涂第二临时键合粘附剂;4)将超薄半导体晶圆背面与第二临时载片正面相对键合;5)将超薄半导体晶圆与第一临时载片分离;6)制备集成互连结构;7)进行键合集成工艺;8)将集成后的晶圆与第二载片分离。本发明通过两种不同软化温度的临时键合粘附剂以及两片临时载片的搭配使用,利用临时键合和解键合工艺,保证超薄半导体晶圆在传输、夹取、互连结构制作以及键合等三维集成工艺过程中均有临时载片支撑,有效降低集成工艺中裂片的风险。

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