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1. CN109362013 - Combined sensor

Office Chine
Numéro de la demande 201811496462.1
Date de la demande 07.12.2018
Numéro de publication 109362013
Date de publication 19.02.2019
Type de publication A
CIB
H04R 19/04
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
RHAUT-PARLEURS, MICROPHONES, TÊTES DE LECTURE POUR TOURNE-DISQUES OU TRANSDUCTEURS ACOUSTIQUES ÉLECTROMÉCANIQUES ANALOGUES; APPAREILS POUR SOURDS; SYSTÈMES D'ANNONCE EN PUBLIC
19Transducteurs électrostatiques
04Microphones
CPC
H04R 19/04
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
04Microphones
Déposants GOERTEK INC.
歌尔股份有限公司
Inventeurs WANG DEXIN
王德信
YANG JUNWEI
杨军伟
PAN XINCHAO
潘新超
DUANMU LUYU
端木鲁玉
QIU WENRUI
邱文瑞
Mandataires 深圳市世纪恒程知识产权代理事务所 44287
Titre
(EN) Combined sensor
(ZH) 组合传感器
Abrégé
(EN)
The invention discloses a combined sensor. The combined sensor comprises a base plate, wherein the base plate has an upper surface and a lower surface; a first MEMS (Micro-Electro-Mechanical System) chip and a first ASIC (Application Specific Integrated Circuit) chip which are mounted on the upper surface of the base plate, wherein the first MEMS chip and the first ASIC chip are electrically connected, and the first MEMS chip is a capacitive structure; and a second MEMS chip and a second ASIC chip which are mounted on the upper surface of the base plate, wherein the second MEMS chip and the second ASIC chip are electrically connected, and a working voltage of the second MEMS chip is an alternating voltage, the shortest distance between the first MEMS chip and the second ASIC chip is d1, the d1 is greater than or equal to 0.3mm, the shortest distance between the first ASIC chip and the second ASIC chip is d2, and the d2 is greater than or equal to 1.2mm. According to the technical scheme provided by the invention, parasitic capacitance effect is weakened, so electromagnetic induction is reduced. When the combined sensor works, background noises of the first MEMS chip are greatly reduced and integrated performance of the combined sensor is improved.

(ZH)
本发明公开了一种组合传感器,组合传感器包括:基板,基板具有上表面和下表面;第一MEMS芯片和第一ASIC芯片,第一MEMS芯片和第一ASIC芯片安装至基板的上表面,第一MEMS芯片和第一ASIC芯片电连接,第一MEMS芯片为电容式结构;以及第二MEMS芯片和第二ASIC芯片,第二MEMS芯片和第二ASIC芯片安装至基板的上表面,第二MEMS芯片和第二ASIC芯片电连接,第二MEMS芯片的工作电压为交流电压;第一MEMS芯片和第二ASIC芯片的最短距离为d1,d1≥0.3mm,第一ASIC芯片和第二ASIC芯片的最短距离为d2,d2≥1.2mm。本发明技术方案减弱寄生电容效应,从而减小了电磁感应,使得组合传感器工作时,第一MEMS芯片的本底噪声大幅度下降,提升了组合传感器的整体性能。

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