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1. US20160223476 - Metrology method, metrology apparatus and device manufacturing method

Office États-Unis d'Amérique
Numéro de la demande 15013756
Date de la demande 02.02.2016
Numéro de publication 20160223476
Date de publication 04.08.2016
Numéro de délivrance 10222709
Date de délivrance 05.03.2019
Type de publication B2
CIB
G01N 23/083
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
02en transmettant la radiation à travers le matériau
06et mesurant l'absorption
083le rayonnement consistant en rayons X
G03F 7/20
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
CPC
G03F 7/70591
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70591Testing optical components
G03F 7/70625
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70625Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
Déposants ASML NETHERLANDS B.V.
Inventeurs Richard Quintanilha
Mandataires Pillsbury Winthrop Shaw Pittman LLP
Données relatives à la priorité 15153825 04.02.2015 EP
Titre
(EN) Metrology method, metrology apparatus and device manufacturing method
Abrégé
(EN)

A pattern is applied to a substrate by a lithographic apparatus as part of a lithographic manufacturing system. Structures are produced with feature sizes less than 10 nm. A target includes one or more gratings with a direction of periodicity. A detector captures one or more diffraction spectra, to implement small angle X-ray scattering metrology. One or more properties, such as linewidth (CD), are calculated from the captured spectra for example by reconstruction. The irradiation direction defines a non-zero polar angle relative to a direction normal to the substrate and defines a non-zero azimuthal angle relative to the direction of periodicity, when projected onto a plane of the substrate. By selecting a suitable azimuthal angle, the diffraction efficiency of the target can be enhanced by a large factor. This allows measurement time to be reduced significantly compared with known techniques.