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1. KR1020110067402 - SUBSTRATE PLATING APPARATUS WITH IMPROVED PLATING EFFICIENCY

Office République de Corée
Numéro de la demande 1020090123980
Date de la demande 14.12.2009
Numéro de publication 1020110067402
Date de publication 22.06.2011
Numéro de délivrance 1011320920000
Date de délivrance 04.04.2012
Type de publication B1
CIB
C23C 18/16
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
CREVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES PAR DIFFUSION DANS LA SURFACE, PAR CONVERSION CHIMIQUE OU SUBSTITUTION; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL
18Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement; Dépôt par contact
16par réduction ou par substitution, p.ex. dépôt sans courant électrique
CPC
C25D 17/001
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
17Constructional parts, or assemblies thereof, of cells for electrolytic coating
001Apparatus specially adapted for plating wafers, e.g. semiconductors, solar cells
C25D 21/06
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
21Processes for servicing or operating cells for electrolytic coating
06Filtering ; particles other than ions
C25D 5/08
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
08Electroplating with moving electrolyte ; , characterised by electrolyte flow; , e.g. jet electroplating
C25D 21/08
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
21Processes for servicing or operating cells for electrolytic coating
08Rinsing
C25D 21/12
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
21Processes for servicing or operating cells for electrolytic coating
12Process control or regulation
Déposants K.C.TECH CO., LTD.
주식회사 케이씨텍
Inventeurs KIM, GUN WOO
김건우
SOHN, YOUNG SUNG
손영성
Mandataires 특허법인무한
Titre
(EN) SUBSTRATE PLATING APPARATUS WITH IMPROVED PLATING EFFICIENCY
(KO) 기판 도금 장치
Abrégé
(EN)
PURPOSE: A substrate plating apparatus is provided to increase the amount of metal ions transferred to a substrate by activating the movement of the metal ions. CONSTITUTION: A substrate plating apparatus comprises an inner chamber(110), an electrolyte supply line(130), and a filtering unit(140). The inner chamber accepts electrolyte. A target unit(120) is arranged in the inner chamber and generates metal ions when positive electrodes are applied to the inner bottom of the inner chamber. The electrolyte supply line is connected to an external electrolyte supply unit and supplies electrolyte to the inner chamber. The filtering unit is coupled to the top of the inner chamber and filters metal ions. COPYRIGHT KIPO 2011

(KO)
본 발명의 기판 도금 장치는, 전해액이 수용되며, 내측 하부에는 양극 인가 시 금속 이온을 발생시키는 타겟부가 배치되는 이너 챔버(Inner Chamber); 복수의 영역에서 이너 챔버의 하부벽 및 측벽 중 적어도 어느 하나의 벽의 두께 방향으로 관통되게 설치되며, 각각이 외부의 전해액 공급부와 독립적으로 연결되어 이너 챔버 내부로 전해액을 공급하는 복수의 전해액 공급라인; 및 이너 챔버의 상부에 결합되며, 전해액 상에서 금속 이온을 여과시키는 여과부;를 포함한다. 본 발명에 따르면, 타겟부로부터 발생되는 금속 이온의 이동을 활성화시킴으로써, 도금 대상물인 기판에 전달되는 금속 이온의 양을 종래보다 증대시킬 수 있으며, 이에 따라 기판에 대한 도금 처리 효율을 향상시킬 수 있으며, 또한 기판의 전면으로 금속 이온이 전달됨으로써 기판에 대한 도금의 균일도를 향상시킬 수 있다.