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1. WO2020163115 - OUTIL DE TRAITEMENT DE SUBSTRAT CAPABLE DE MODULER UN OU PLUSIEURS PLASMA DANS LE TEMPS ET/OU DANS L'ESPACE

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CLAIMS

What is claimed is:

1. A deposition tool, comprising:

a processing chamber;

a substrate holder for holding a substrate within the processing chamber; a first plasma source configured to generate a first plasma within the processing chamber; and

a second plasma source configured to generate a second plasma within the processing chamber; and

a controller arranged to modulate activation of the first plasma and the second plasma either temporally or spatially with respect to one another within the processing chamber.

2. The deposition tool of claim 1, wherein the controller is arranged to temporally modulate the first plasma and the second plasma by selectively controlling when the first plasma and the second plasma are activated with respect to one another, the first plasma resulting in a generation of atoms of a material that is deposited on the substrate and the second resulting in ions of the material bombarding the substrate.

3. The deposition tool of claim 2, wherein the controller temporally modulates the first plasma and the second plasma in at least one of the following ways:

(a) alternating the activation of the first plasma and the second plasma in discrete, non-overlapping, pulses; or

(b) alternating the activation of the first plasma and the second plasma in partially overlapping, pulses, wherein the temporal modulation occurs during non overlapping portions of the partially overlapping pulses.

4. The deposition tool of claim 1, wherein the spatial modulation of the first plasma and the second plasma results in the spatial modulation of the atoms generated by the first plasma and the bombardment of the ions resulting from the second plasma across discrete portions of the surface of the substrate.

5. The deposition tool of claim 1, wherein the first plasma is configured to generate low energy atoms that deposit on the substrate while the second plasma is configured to generate high energy ions that bombard the surface of the substrate.

6. The deposition tool of claim 1 , wherein the first plasma is generated by one of the following:

(a) a hollow cathode that is at least partially made of a material to be deposited onto the substrate in the processing chamber;

(b) a hollow cathode that is arranged to contain or receive a material that is to be deposited onto the substrate in the processing chamber; or

(c) a magnetron that is arranged to generate particles of a material that is to be deposited onto the substrate in the processing chamber.

7. The deposition tool of claim 1, further comprising a mesh including a plurality of holes positioned adjacent the first plasma source within the processing chamber, the plurality of holes facing the substrate within the processing chamber and allowing atoms generated by the first plasma source to pass from the first plasma to the substrate.

8. The deposition tool of claim 7, wherein the mesh is further arranged to at least partially block electrons present in the first plasma from striking the substrate.

9. The deposition tool of claim 1, wherein the substrate is grounded or biased with respect to the first plasma and the second plasma.

10. The deposition tool of claim 1, further comprising an anode for selectively and dynamically controlling the voltage of the second plasma when activated with respect to the substrate so as to maintain an equilibrium of surface charges on the substrate.

11. The deposition tool of claim 1 , further comprising a negative power source for selectively applying a negative voltage to the first plasma when the first plasma is activated with respect to the substrate.

12. The deposition tool of claim 16, wherein the negative voltage is within a range of -lOOeV to -200 eV.

13. The deposition tool of claim 1, wherein the second plasma is a Capacitive Coupled Plasma (CCP).

14. The deposition tool of claim 1, wherein the second plasma source includes a Radio Frequency (RF) power source for activating the second plasma.

15. The deposition tool of claim 14, wherein the RF power source is one of the following:

(a) approximately 100MHz;

(b) approximately 27MHz;

(c) 13.56MHz; or

(e) ranging from 400 KHz to 5.0 GHz.

16. The deposition tool of claim 1, wherein the processing chamber is made at least partially of a non-conductive material.

17. The deposition tool of claim 16, wherein the non-conductive material is selected from the group including ceramic, quartz, or other dielectric materials.

18. The deposition tool of claim 1, further comprising an RF loop coupled between the substrate and an RF source used for generating the second plasma, wherein the RF loop effectively defines a ground shield around the processing chamber.

19. The deposition tool of claim 1, further comprising a barrier provided between the second plasma and the substrate, the barrier substantially preventing the second plasma from contacting the substrate.

20. The deposition tool of claim 1, further comprising a neutralizing element, provided between the substrate and the second carbon plasma, the neutralizing element acting to reduce energy flux on the substrate by enabling electrons to combine with ions prior to bombarding the substrate.

21. The deposition tool of claim 1, wherein the material is carbon and the atoms that deposit on the substrate are amorphous carbon atoms that are transformed into an amorphous carbon layer having sp3 bonding.

22. A deposition tool comprising:

a processing chamber;

a substrate holder for holding a substrate within the processing chamber;

a first carbon plasma source for generating a first carbon plasma inside the processing chamber, the first carbon plasma arranged to generate carbon atoms having a low energy that deposit on a surface of the substrate; and

a second plasma configured to ionize the carbon atoms, the carbon ions bombarding the surface of the substrate,

wherein the bombardment of the carbon ions transforming the deposited carbon atoms to a Diamond- Like Carbon (DCL) film on the surface of the substrate.

23. The deposition tool of claim 22, wherein the Diamond-Like Carbon (DCL) film formed on the surface of the substrate occurs via a formation of sp3 bonds that result from the ionized carbon particles bombarding the surface of the substrate.

24. The deposition tool of claim 22, wherein the DCL film consists of the group including hydrogenated amorphous carbon (a-C:H) and hydrogenated tetrahedral amorphous carbon (ta-C:H)and tetrahedral amorphous carbon or "ta-C"

25. The deposition tool of claim 22, wherein the carbon ions are mono-energetic having an energy level with respect to the substrate ranging from 100 eV to 500 eV

26. The deposition tool of claim 22, further comprising a controller arranged to temporally modulate the first carbon plasma and the second plasma within the processing chamber.

27. The deposition tool of claim 26, wherein the controller temporally modulates the first carbon plasma and the second plasma by alternating activation of the first carbon plasma and the second plasma in discrete, non-overlapping, pulses.

28. The deposition tool of claim 26, wherein the controller temporally modulates the first carbon plasma and the second plasma by activation of the first carbon plasma and the second plasma during non-overlapping portions of partially overlapping, pulses respectively.

29. The deposition tool of claim 26, wherein the controller spatially modulates the first carbon plasma and the second plasma activating the first carbon plasma and the second plasma continuously as the DCL film is formed on the surface of the substrate.

30. The deposition tool of claim 26, wherein the controller modulates the first carbon plasma and the second plasma to maintain and control an equilibrium of surface charges on the surface of the substrate.

31. The deposition tool of claim 30, wherein the controller controls the surface charges on the surface of the substrate by controlling an energy of electrons that strike the surface of the substrate, the electrons offset positive charges collecting on the surface of the wafer due to the bombardment of the carbon ions.

32. The deposition tool of claim 31, wherein the controller causes the electrons to be generated by activating the first plasma.

33. The deposition tool of claim 22, wherein the spatial modulation of the first plasma and the second plasma results in the spatial modulation of the carbon atoms and the bombardment of the carbon ions across discrete locations on a surface of the substrate respectively.

34. The deposition tool of claim 22, further comprising a neutralizing element, provided between the substrate and the second plasma, the neutralizing element neutralizing a charge of the carbon ions prior to bombarding the surface of the substrate.

35. The deposition tool of claim 34, wherein the neutralizing element is a graphite plate having a plurality of holes that enable the carbon ions to attract electrons as the carbon ions pass through the neutralizing element.

36. The deposition tool of claim 22, further comprising a barrier element arranged to prevent the second plasma from contacting the substrate.

37. The deposition tool of claim 22, wherein the substrate holder is configured to maintain the temperature of the substrate at or below approximately 300° C.

38. The deposition tool of claim 22, wherein the first carbon source is hollow cathode.

39. The deposition tool of claim 38, wherein the hollow cathode is made from graphite.

40. The deposition tool of claim 38, wherein the hollow cathode includes a plurality of cells and a carbon particle generating material is arranged to be inserted into or contained within the plurality of cells.

41. The deposition tool of claim 22, wherein the first carbon source is a magnetron.

42. The deposition tool of claim 22, wherein the first carbon plasma is generated by the first carbon plasma source by:

igniting carbon in a hollow chamber included in the first carbon plasma source by supplying an ignition gas into the hollow chamber;

after the carbon is ignited, weaning or stopping the supply of the ignition gas into the hollow chamber;

wherein after the supply of the ignition gas is weaned or stopped, the first carbon plasma contains substantially only carbon.

43. The deposition tool of claim 22, wherein a negative voltage is applied to the first plasma source when the first carbon plasma is generated, the negative voltage within a range of -100 eV to -200 eV.

44. The deposition tool of claim 22, wherein the second plasma is a Capacitive Coupled Plasma (CCP).

45. The deposition tool of claim 22, wherein the second plasma is activated by a Radio Frequency (RF) power source, wherein the RF power source is one of the following:

(a) approximately 100MHz;

(b) approximately 27MHz;

(c) 13.56MHz; or

(e) ranging from 400 KHz to 5.0 GHz.

46. The deposition tool of claim 22, further comprising an anode for selectively controlling the voltage of the second plasma.

47. The deposition tool of claim 22, wherein the substrate is maintained at ground or is biased with respect to the first carbon plasma and the second plasma.