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1. WO2020160358 - DISPOSITIF DE MÉMOIRE MAGNÉTIQUE UTILISANT UNE COUCHE DE SEMI-CONDUCTEUR DOPÉ

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

WHAT IS CLAIMED IS:

1. A magnetic memory device comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.

2. The device of claim 1, wherein the doped semiconductor has a bandgap of at least 3 eV.

3. The device of claim 1, wherein the doped semiconductor has an average thickness of no more than 2 nm.

4. The device of claim 1, wherein the doped semiconductor is a doped group III-VI semiconductor.

5. The device of claim 4, wherein the doped semiconductor is doped

(Al,In,Ga)203.

6. The device of claim 4, wherein the doped semiconductor is a group IV-doped group III- VI semiconductor.

7. The device of claim 6, wherein the doped semiconductor is a Si-doped group III- VI semiconductor.

8. The device of claim 6, wherein the doped semiconductor is Si-doped

(Al,In,Ga)203.

9. The device of Claim 1, wherein the first and second ferromagnetic layers are independently selected from CoFeB, CoFe, and Fe.

10. The device of claim 1, wherein the doped semiconductor is characterized by a carrier concentration of at least 1015 cm 3.

11. The device of claim 1, further comprising a first electrode and a second electrode configured to apply a voltage across the device.

12. The device of claim 1, wherein the doped semiconductor is Si-doped

(Al,In,Ga)203 and the first and second ferromagnetic layers are independently selected from CoFeB, CoFe, and Fe.

13. A computing device comprising a processor and the magnetic memory device of claim 1.

14. A method of using the magnetic memory device of claim 1, the method comprising applying a voltage across the device.

15. The method of claim 14, wherein the voltage is sufficient to reorient or switch a magnetization of one of the first and second ferromagnetic layers.

16. The method of claim 14, wherein the voltage required to reorient or switch a magnetization of one of the first and second ferromagnetic layers depends upon a carrier concentration in the doped semiconductor.