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Resultados 1-10 de 491.557 para loscriterios:(NPCC:KR AND CTR:WO) Oficina(s):all Idioma:es separación automática de palabras en lexemas: false
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TítuloPaísFecha de publicación
Nº de solicitudSolicitanteInventor/aClasificación Internacional
HIGH-PERFORMANCE RISC MICROPROCESSOR ARCHITECTURE
WO21.01.1993
PCT/JP1992/000868SEIKO EPSON CORPORATIONNGUYEN, Le Trong
G06F 9/30
G FISICA
06
COMPUTO; CALCULO; CONTEO
F
TRATAMIENTO DE DATOS DIGITALES ELECTRICOS
9
Disposiciones para el control por programa, p. ej. unidad de control
06
que utilizan un programa almacenado, es decir que utilizan una unidad de almacenamiento interna del equipo de tratamiento de datos para recibir y conservar el programa
30
Disposiciones para ejecutar instrucciones máquina, p. ej. decodificación de instrucciones
The high-performance, RISC core based microprocessor architecture permits concurrent execution of instructions obtained from memory through an instruction prefetch unit having multiple prefetch paths allowing for the main program instruction stream, a target conditional branch instruction stream and a procedural instruction stream. The target conditional branch prefetch path allows both possible instruction streams for a conditional branch instruction to be prefetched. The procedural instruction prefetch path allows a supplementary instruction stream to be accessed without clearing the main or target prefetch buffers. Each instruction set includes a plurality of fixed length instructions. An instruction FIFO is provided for buffering instruction sets in a plurality of instruction set buffers including a first buffer and a second buffer. An instruction execution unit including a register file and a plurality of functional units is provided with an instruction control unit capable of examining the instruction sets within the first and second buffers and scheduling any of the instructions for execution by available functional units. Multiple data paths between the functional units and the register file allow multiple independent accesses to the register file by the functional units as necessary for the execution of the respective instructions.

PORTABLE DISPLAY DEVICE
WO12.01.2012
PCT/KR2011/005017KIM, Si-HanKIM, Si-Han
G06F 3/14
G FISICA
06
COMPUTO; CALCULO; CONTEO
F
TRATAMIENTO DE DATOS DIGITALES ELECTRICOS
3
Disposiciones de entrada para la transferencia de datos destinados a ser procesados en una forma utilizable por el computador; Disposiciones de salida para la transferencia de datos desde la unidad de procesamiento a la unidad de salida, p. ej. disposiciones de interfaz
14
Salida digital hacia un dispositivo de visualización
The present invention relates to a portable display device which includes at least two panel housings, and the panel housings are provided with respective displays, such that the displays are interconnected to form a single screen when the panel housings are unfolded. The entire screen of the display device can be displayed as being divided in a vertical or horizontal direction by the first display and the second display. The first display and the second display contact each other. The portable display device includes a first input device corresponding to the information outputted on the first display and a second input device corresponding to the information outputted on the second display. The first input device and the second input device also contact each other, such that the two input devices can be used as a single input device.

METHOD AND APPARATUS FOR A SPECTRALLY COMPLIANT CELLULAR COMMUNICATION SYSTEM
WO28.06.2001
PCT/US2000/034353TANTIVY COMMUNICATIONS, INC.AMALFITANO, Carlo
H04W 72/04
H ELECTRICIDAD
04
TECNICA DE LAS COMUNICACIONES ELECTRICAS
W
REDES DE COMUNICACION INALAMBRICAS
72
Gestión de recursos locales, p. ej. selección o reserva de recursos inalámbricos o planificación de tráfico inalámbrico
04
Reserva de recursos inalámbricos
A system for wireless data transmission that uses a channel bandwidth, channel separation, and radio frequency power spectrum which is compatible with existing deployments of wireless voice services. The transmitted waveforms are thus compatible with existing cellular networks. However, the time domain digital coding, modulation, and power control schemes are optimized for data transmission. Existing cellular network sites can thus be used to provide a high speed service optimized for wireless data traffic without the need for new radio frequency planning, and without interfering with existing voice service deployments.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO13.01.2011
PCT/JP2010/061221SEMICONDUCTOR ENERGY LABORATORY CO., LTD.YAMAZAKI, Shunpei
H01L 21/336
H ELECTRICIDAD
01
ELEMENTOS ELECTRICOS BASICOS
L
DISPOSITIVOS SEMICONDUCTORES; DISPOSITIVOS ELECTRICOS DE ESTADO SOLIDO NO PREVISTOS EN OTRO LUGAR
21
Procedimientos o aparatos especialmente adaptados para la fabricación o el tratamiento de dispositivos semiconductores o de dispositivos de estado sólido, o bien de sus partes constitutivas
02
Fabricación o tratamiento de dispositivos semiconductores o de sus partes constitutivas
04
los dispositivos presentan al menos una barrera de potencial o una barrera de superficie, p. ej. una unión PN, una región de empobrecimiento, o una región de concentración de portadores de cargas
18
los dispositivos tienen cuerpos semiconductores que incluyen elementos del cuarto grupo de la Tabla Periódica, o de compuestos AIIIBVcon o sin impurezas, p. ej. materiales de dopado
334
Procedimientos que comportan varias etapas para la fabricación de dispositivos de tipo unipolar
335
Transistores de efecto de campo
336
con puerta aislada
It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO11.08.2011
PCT/JP2011/050612SEMICONDUCTOR ENERGY LABORATORY CO., LTD.YAMAZAKI, Shunpei
H01L 29/786
H ELECTRICIDAD
01
ELEMENTOS ELECTRICOS BASICOS
L
DISPOSITIVOS SEMICONDUCTORES; DISPOSITIVOS ELECTRICOS DE ESTADO SOLIDO NO PREVISTOS EN OTRO LUGAR
29
Dispositivos semiconductores adaptados a la rectificación, amplificación, generación de oscilaciones o a la conmutación que tienen al menos una barrera de potencial o de superficie; Condensadores o resistencias, que tienen al menos una barrera de potencial o de superficie, p. ej. unión PN, región de empobrecimiento, o región de concentración de portadores de carga; Detalles de cuerpos semiconductores o de sus electrodos
66
Tipos de dispositivos semiconductores
68
controlables únicamente por la corriente eléctrica suministrada, o la tensión eléctrica aplicada, a un electrodo que no transporta la corriente a rectificar, amplificar o conmutar
76
Dispositivos unipolares
772
Transistores de efecto de campo
78
estando producido el efecto de campo por una puerta aislada
786
Transistores de película delgada
A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WO27.05.2010
PCT/JP2009/069407SEMICONDUCTOR ENERGY LABORATORY CO., LTD.MIYAIRI, Hidekazu
H01L 29/786
H ELECTRICIDAD
01
ELEMENTOS ELECTRICOS BASICOS
L
DISPOSITIVOS SEMICONDUCTORES; DISPOSITIVOS ELECTRICOS DE ESTADO SOLIDO NO PREVISTOS EN OTRO LUGAR
29
Dispositivos semiconductores adaptados a la rectificación, amplificación, generación de oscilaciones o a la conmutación que tienen al menos una barrera de potencial o de superficie; Condensadores o resistencias, que tienen al menos una barrera de potencial o de superficie, p. ej. unión PN, región de empobrecimiento, o región de concentración de portadores de carga; Detalles de cuerpos semiconductores o de sus electrodos
66
Tipos de dispositivos semiconductores
68
controlables únicamente por la corriente eléctrica suministrada, o la tensión eléctrica aplicada, a un electrodo que no transporta la corriente a rectificar, amplificar o conmutar
76
Dispositivos unipolares
772
Transistores de efecto de campo
78
estando producido el efecto de campo por una puerta aislada
786
Transistores de película delgada
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

DISPLAY DEVICE
WO08.04.2010
PCT/JP2009/067119SEMICONDUCTOR ENERGY LABORATORY CO., LTD.YAMAZAKI, Shunpei
H01L 29/786
H ELECTRICIDAD
01
ELEMENTOS ELECTRICOS BASICOS
L
DISPOSITIVOS SEMICONDUCTORES; DISPOSITIVOS ELECTRICOS DE ESTADO SOLIDO NO PREVISTOS EN OTRO LUGAR
29
Dispositivos semiconductores adaptados a la rectificación, amplificación, generación de oscilaciones o a la conmutación que tienen al menos una barrera de potencial o de superficie; Condensadores o resistencias, que tienen al menos una barrera de potencial o de superficie, p. ej. unión PN, región de empobrecimiento, o región de concentración de portadores de carga; Detalles de cuerpos semiconductores o de sus electrodos
66
Tipos de dispositivos semiconductores
68
controlables únicamente por la corriente eléctrica suministrada, o la tensión eléctrica aplicada, a un electrodo que no transporta la corriente a rectificar, amplificar o conmutar
76
Dispositivos unipolares
772
Transistores de efecto de campo
78
estando producido el efecto de campo por una puerta aislada
786
Transistores de película delgada
With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME
WO14.01.2010
PCT/JP2009/062253SEMICONDUCTOR ENERGY LABORATORY CO., LTD.SEO, Satoshi
H05B 33/12
H ELECTRICIDAD
05
TECNICAS ELECTRICAS NO PREVISTAS EN OTRO LUGAR
B
CALEFACCION ELECTRICA; ALUMBRADO ELECTRICO NO PREVISTO EN OTRO LUGAR
33
Fuentes de luz electroluminiscente
12
Fuentes de luz con elementos radiantes que tienen esencialmente dos dimensiones
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; and a white-emissive light-emitting element formed over and being in contact with the thin film transistor.

PORTABLE DISPLAY APPARATUS
WO13.10.2011
PCT/KR2011/002470KIM, Si-HanKIM, Si-Han
G06F 1/16
G FISICA
06
COMPUTO; CALCULO; CONTEO
F
TRATAMIENTO DE DATOS DIGITALES ELECTRICOS
1
Detalles no cubiertos en los grupos G06F3/-G06F13/143
16
Detalles o disposiciones de estructura
The present invention relates to a portable display apparatus comprising: at least two housing panels which are provided with upper and lower parts respectively stacked together; and display units mounted on the upper and lower housing panels, respectively, in which the upper and lower housing panels are slidable in the left and right directions and movable in the upward and downward directions relative to one another, such that the display units mounted on the upper and lower housing panels are placed adjacent to one another, wherein the gap between the display units is 0.1 mm to 5 mm when the display units are placed adjacent to one another, and a separate moving means is provided between the upper and lower housing panels. Thus, in order to set the two display units which have been stacked at the same height, it is possible to effectively provide a moving means for movement in the upward and downward directions, together with a sliding means for sliding in the left and right directions. In addition, the separate moving means functions to firmly support the upper housing panel when the housing panels are completely unfolded.

PULSE OUTPUT CIRCUIT, SHIFT REGISTER, AND DISPLAY DEVICE
WO24.11.2011
PCT/JP2011/061465SEMICONDUCTOR ENERGY LABORATORY CO., LTD.AMANO, Seiko
H03K 19/0175
H ELECTRICIDAD
03
CIRCUITOS ELECTRONICOS BASICOS
K
TECNICA DE IMPULSO
19
Circuitos lógicos, es decir, teniendo al menos dos entradas que actúan sobre una salida; Circuitos de inversión
0175
Disposiciones para el acoplamiento; Disposiciones para la interfase
In a pulse output circuit in a shift register, a power source line which is connected to a transistor in an output portion connected to a pulse output circuit at the next stage is set to a low-potential drive voltage, and a power source line which is connected to a transistor in an output portion connected to a scan signal line is set to a variable potential drive voltage. The variable potential drive voltage is the low-potential drive voltage in a normal mode, and can be either a high-potential drive voltage or the low-potential drive voltage in a bath mode. In the batch mode, display scan signals can be output to a plurality of scan signal lines at the same timing in a batch.

Resultados 1-10 de 491.557 para loscriterios:(NPCC:KR AND CTR:WO) Oficina(s):all Idioma:es separación automática de palabras en lexemas: false
1 2 3 4 5 6 7 8 9 10 11 12
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