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1. AU2013209362 - MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE

Oficina Australia
Número de solicitud 2013209362
Fecha de la solicitud 22.07.2013
N.º de publicación 2013209362
Fecha de publicación 08.08.2013
Tipo de publicación A1
CIP
G FISICA
11
REGISTRO DE LA INFORMACION
C
MEMORIAS ESTATICAS
16
Memorias de sólo lectura programables y borrables
02
programables eléctricamente
04
utilizando transistores de umbral variable, p. ej. FAMOS
G FISICA
11
REGISTRO DE LA INFORMACION
C
MEMORIAS ESTATICAS
16
Memorias de sólo lectura programables y borrables
02
programables eléctricamente
06
Circuitos auxiliares, p. ej. para escritura en la memoria
10
Circuitos de programación o de entrada de datos
G11C 16/04
G11C 16/10
CPC
G11C 11/5642
G11C 16/00
G11C 16/0483
G11C 16/26
G11C 16/3431
G11C 29/021
Solicitantes Samsung Electronics Co., Ltd.
Mandatarios Spruson & Ferguson
Datos de prioridad 10-2012-0080247 23.07.2012 KR
Título
(EN) MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE
Resumen
(EN)
A memory device includes a memory cell array having a plurality of memory cells, and a page buffer unit including a plurality of page buffers configured to store a plurality of pieces of data sequentially read from some of the plurality of memory cells at different read voltage levels, respectively, and to perform a logic operation on the plurality of pieces of data, respectively. The memory device further includes a counting unit configured to count the number of memory cells that exist in each of a plurality of sections defined by the different read voltage levels, based on results of the logic operation