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1. (US20100264420) Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film

专利局 : 美国
申请号: 12824899 申请日: 28.06.2010
公布号: 20100264420 公布日: 21.10.2010
授权号: 08222098 授权日: 17.07.2012
公布类型: B2
国际专利分类:
H01L 21/00
H01L 21/84
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
21
专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
21
专门适用于制造或处理半导体或固体器件或其部件的方法或设备
70
由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理;集成电路器件或其特殊部件的制造
77
在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理
78
把衬底连续地分成多个独立的器件
82
制造器件,例如每一个由许多元件组成的集成电路
84
衬底不是半导体的,例如绝缘体
申请人: Semiconductor Energy Laboratory Co., Ltd.
发明人: Honda Tatsuya
代理人: Husch Blackwell LLC
优先权数据: 2005-300825 14.10.2005 JP
标题: (EN) Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film
摘要: front page image
(EN)

An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.


也发表为:
US20120097964US20140326998