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1. (EP0561386) Semiconductor device.

专利局 : 欧洲专利局 (EPO)
申请号: 93104360 申请日: 17.03.1993
公布号: 0561386 公布日: 22.09.1993
公布类型: A1
指定国: DE,FR,GB
国际专利分类:
H 03K
H03K 17/0812
H03K 17/082
H03K 17/16
H 电学
03
基本电子电路
K
脉冲技术
17
电子开关或选通,即不通过通断接触的
08
开关电路过流或过压保护的改进
H 电学
03
基本电子电路
K
脉冲技术
17
电子开关或选通,即不通过通断接触的
08
开关电路过流或过压保护的改进
081
没有从输出电路到控制电路的反馈
0812
通过对控制电路的测量
H 电学
03
基本电子电路
K
脉冲技术
17
电子开关或选通,即不通过通断接触的
08
开关电路过流或过压保护的改进
082
通过从输出电路到控制电路的反馈
H 电学
03
基本电子电路
K
脉冲技术
17
电子开关或选通,即不通过通断接触的
16
消除干扰电压或电流的改进
CPC:
H03K 17/0828
H03K 17/08128
H03K 17/0822
H03K 17/168
H03K 17/18
申请人: FUJI ELECTRIC CO LTD
发明人: OGAWA SHOGO
MIYASAKA TADASHI
KOBAYASHI SHINICHI
KUWABARA KESANOBU
优先权数据: 12521492 19.05.1992 JP
6225492 18.03.1992 JP
6596092 24.03.1992 JP
标题: (DE) Halbleiteranordnung.
(EN) Semiconductor device.
(FR) Dispositif semi-conducteur.
摘要: front page image
(EN) A semiconductor device includes an insulated gate semiconductor portion (2) having a gate electrode (2g); an overcurrent limiting portion (12,13) for judging an overcurrent state of the insulated gate semiconductor portion (2) to make it possible to change a gate voltage applied to the gate electrode (2g); and a driving portion (30) for driving the insulated gate semiconductor portion (2). The driving portion (30) includes a driving section (20) for supplying a control voltage to the insulated gate semiconductor device (2) correspondingly to an input signal (I) supplied to the driving portion; and a comparing section (40) for comparing the gate voltage (VG) with a predetermined reference voltage (Vo). The semiconductor device may further include a gate control relaxation section (141) for relaxing a rate of change of the gate voltage (VG) applied to the gate electrode.