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1. (WO2019066978) CONDUCTIVE VIA AND METAL LINE END FABRICATION AND STRUCTURES RESULTING THEREFROM
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CLAIMS

What is claimed is:

1. An interconnect structure, comprising:

a first inter-layer dielectric (ILD) on a hardmask layer, wherein the ILD includes a first ILD opening and a second ILD opening;

an etch stop layer (ESL) on the ILD layer, wherein the ESL includes a first ESL opening aligned with the first ILD opening to form a first via opening, and wherein the ESL layer includes a second ESL opening aligned with the second ILD opening;

a first via in the first via opening;

a second ILD layer on the first ESL;

a metal line in the second ILD layer, wherein the metal line is in contact with the first via, and wherein the metal line includes a first metal opening, and wherein the metal line includes a second metal opening aligned with the second ILD opening and the ESL opening to form a second via opening;

a metal line end in the first metal opening; and

a second via in the metal line, wherein the second via is in the second via opening.

2. The interconnect structure of claim 1, wherein the first via is a gate via and wherein the second via is a diffusion via.

3. The interconnect structure of claim 1, wherein the first ILD layer includes a first dielectric material and the second ILD layer includes a second dielectric material.

4. The interconnect structure of claim 3, wherein the first ILD layer and the second ILD layer include a same dielectric material.

5. The interconnect structure of claim 1, wherein the second ILD layer and the metal line end include a same dielectric material.

6. The interconnect structure of claim 1, wherein the hardmask layer includes a first material adjacent to a second material, wherein the first material is able to remain if the second material is etched.

7. The interconnect structure of claim 6, further comprising:

a semiconductor device, wherein the semiconductor device includes,

a semiconductor substrate;

a gate contact on the semiconductor substrate, wherein the first via is a gate via is in contact with the gate contact through removal of a portion of the first material in the hardmask layer; and

a diffusion contact on the semiconductor substrate, wherein the second via is a diffusion via in contact with the diffusion contact through removal of a portion of the second material in the hardmask layer.

8. A method of fabricating an interconnect structure for an integrated circuit, the method comprising:

forming a first cross-grating structure comprising a first sacrificial cross-grating on a first film stack, wherein the first sacrificial cross-grating structure includes a plurality of potential gate via locations that include a gate via placeholder material, and wherein a subset of the potential gate via locations are activated gate via locations that include gate via openings from which the gate via placeholder material has been removed;

removing first film stack material from a bottom of the activated gate via locations through to a gate contact;

filling the activated gate via location with a first conductive material to form a gate via; removing the first sacrificial cross-grating, to expose a surface of a first ILD layer of the first film stack and a surface of the gate via in the first ILD layer, wherein removal of the first sacrificial cross-grating includes removal of a remainder of the first film stack above the first ILD layer;

forming on the surface of the first ILD layer a second cross-grating structure comprising a second sacrificial cross-grating on a second film stack, wherein the second sacrificial cross-grating includes a first portion, a second portion, and a plurality of potential plug locations that include a plug placeholder material, and wherein a subset of the potential plug locations are activated plug locations that include a plug opening from which the plug placeholder material has been removed;

filling the activated plug locations with a plug placeholder material to form a plug;

removing the second portion of the second sacrificial cross-grating, to form, in the first portion of the second sacrificial cross-grating, a metal line end under the plug, wherein the metal line end includes ILD material of an ILD layer of the second film stack, and further to form ILD lines on the surface of an etch stop layer (ESL) of the second film stack, and wherein the ILD lines include the ILD material;

forming on the ESL a third cross-grating structure comprising a third sacrificial cross-grating, wherein the third sacrificial cross-grating includes a plurality of potential diffusion via locations that include a diffusion via placeholder material, and wherein a subset of the potential diffusion via locations are activated diffusion via locations that include an opening from which the diffusion via placeholder material has been removed;

removing ESL material and first ILD material from a bottom of the activated diffusion via location through to a diffusion via guide section in a hardmask layer in the first film stack; removing the third sacrificial cross-grating, to form trenches between the ILD lines on the surface of the ESL;

removing the diffusion via guide section;

filling the activated diffusion via locations with a second conductive material to form diffusion vias;

filling the trenches with the second conductive material to form a metal line, wherein the surface of the gate via is in contact with the metal line; and

removing a sacrificial material of a sacrificial layer of the second film stack, to expose a surface of the metal lines, the ILD lines, the metal line ends, and the diffusion via, and wherein a removal of the sacrificial material of the sacrificial layer of the second film stack includes a removal of the plugs.

9. The method of claim 8, wherein removing the first film stack material from the bottom of the activated gate via location comprises applying an anisotropic etch technique.

10. The method of claim 9, wherein applying the anisotropic etch technique comprises using a dry etching process.

11. The method of claim 8, wherein filling the activated gate via location with the first conductive material to form the gate via comprises:

filling the activated gate via location with excess first conductive material; and polishing the excess first conductive material, to remove the excess first conductive material.

12. The method of claim 8, further comprising removing the first film stack material from the bottom of the activated gate via location through to a gate via guide section in a hardmask layer in the first film stack, wherein the gate via guide section is above the gate contact

13. The method of claim 8, wherein the plug and the metal line end include sidewalls, and wherein the method further comprises depositing a liner by atomic layer deposition, to protect the sidewalls.

14. The method of claim 8, wherein removing the third sacrificial cross-grating comprises applying an isotropic etching technique.

15. The method of claim 8, further comprising depositing a diffusion via placeholder material in the activated diffusion via locations.

16. The method of claim 8, wherein filling the activated diffusion via locations with the second conductive material to form the diffusion vias comprises:

filling the activated diffusion via locations with excess second conductive material; and polishing the excess second conductive material.

17. A method of fabricating an interconnect structure for an integrated circuit, the method comprising:

forming a first cross-grating structure comprising a sacrificial cross-grating on a first film stack, wherein the first cross-grating structure includes a plurality of potential gate via locations that include a gate via placeholder material, and wherein a subset of the potential gate via locations are activated gate via locations that include gate via opening from which the gate via placeholder material has been removed;

removing first film stack material from a bottom of the activated gate via locations through to a gate contact;

forming a gate via in a first ILD layer of the first film stack, wherein the gate via includes a first conductive material in the activated gate via location;

exposing a surface of the first ILD layer;

forming on the first ILD layer a second cross-grating structure comprising a second sacrificial cross-grating on a second film stack wherein the second sacrificial cross-grating includes a first portion, a second portion, and a plurality of potential plug locations that include a plug placeholder material, and wherein a subset of the potential plug locations are activated plug locations that include an opening from which the plug placeholder material has been removed; forming a plug that includes a plug material in the activated plug locations;

forming, on a surface of an etch stop layer (ESL) of the second film stack, a metal line end under the plug, by removing the first portion of the second sacrificial cross-grating, wherein the metal line end includes ILD material of an ILD layer of the second film stack;

forming ILD lines on the surface of the ESL by removing the first portion of the second sacrificial cross-grating, wherein the ILD lines include the ILD material of the ILD layer;

forming on the ESL a third cross-grating structure comprising a third sacrificial cross-

grating, wherein the third sacrificial cross-grating includes a plurality of potential diffusion via locations that include a diffusion via placeholder material, and wherein a subset of the potential diffusion via locations are activated diffusion via locations that include an opening from which the diffusion via placeholder material has been removed;

removing ESL material and the ILD material from a bottom of the activated diffusion via location through to a diffusion contact;

depositing a diffusion via placeholder material in the activated via locations;

forming trenches between the ILD lines on the surface of the ESL;

forming a diffusion via that includes a second conductive material in the activated diffusion via locations;

forming a metal line that includes the second conductive material in the trenches, wherein the surface of the gate via is in contact with the metal line; and

removing a sacrificial material of a sacrificial layer of the second film stack, to planarize a surface of the metal line, the ILD lines, the metal line end, and the diffusion via, wherein a removal of the sacrificial material of the sacrificial layer of the second film stack includes a removal of the plugs.

18. The method of claim 17, wherein exposing the surface of the first ILD layer comprises removing the first sacrificial cross-grating, wherein removal of the first sacrificial cross-grating includes removal of a remainder of the first film stack above the first ILD layer.

19. The method of claim 17, further comprising removing the ESL material and the ILD material from the bottom of the activated diffusion via location through to a diffusion via guide section in a hardmask layer in the first film stack, wherein the diffusion via guide section is above the diffusion contact.

20. The method of claim 17, wherein forming the trenches between the ILD lines on the surface of the ESL comprises removing the third sacrificial cross-grating.