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1. (WO2018037302) DOPED BISMUTH OXIDE THIN FILMS, ELECTROCHEMICAL DEVICES, METHODS OF MAKING, AND USE THEREOF
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公布号: WO/2018/037302 国际申请号: PCT/IB2017/054674
公布日: 01.03.2018 国际申请日: 31.07.2017
国际专利分类:
H01M 8/1246 (2016.01) ,H01M 8/249 (2016.01)
[IPC code unknown for H01M 8/1246][IPC code unknown for H01M 8/249]
申请人:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA/SA]; 4700 King Abdullah University of Science and Technology Thuwal, 23955-6900, SA
发明人:
CAVAZOS SEPÚLVEDA, Adrián César; SA
优先权数据:
62/379,78526.08.2016US
标题 (EN) DOPED BISMUTH OXIDE THIN FILMS, ELECTROCHEMICAL DEVICES, METHODS OF MAKING, AND USE THEREOF
(FR) FILMS MINCES D'OXYDE DE BISMUTH DOPÉS, DISPOSITIFS ÉLECTROCHIMIQUES, PROCÉDÉS DE FABRICATION ET D'UTILISATION DE CEUX-CI
摘要:
(EN) Embodiments of the present disclosure provide for electrochemical devices, methods of converting chemical energy to electrical energy, and the like.
(FR) Des modes de réalisation de la présente invention concernent des dispositifs électrochimiques, des procédés de conversion d'énergie chimique en énergie électrique, et analogues.
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指定国: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
非洲地区知识产权组织 (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
欧亚专利局 (AM, AZ, BY, KG, KZ, RU, TJ, TM)
欧洲专利局 (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
非洲知识产权组织 (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
公布语言: 英语 (EN)
申请语言: 英语 (EN)