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1. (WO2016010270) SUBSTRATE STRUCTURE, METHOD FOR FORMING SAME, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR USING SAME
国际局存档的最新著录项目数据   

公布号: WO/2016/010270 国际申请号: PCT/KR2015/006263
公布日: 21.01.2016 国际申请日: 19.06.2015
国际专利分类:
H01L 33/22 (2010.01) ,H01L 33/32 (2010.01) ,H01L 21/20 (2006.01)
申请人: HEXASOLUTION CO., LTD.[KR/KR]; 9F., C Dong, 145, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, KR
发明人: BAE, Duk-Kyu; KR
MOON, Young-Boo; KR
PARK, Yongjo; KR
代理人: PHIL & ONZI INT'L PATENT & LAW FIRM; 8F., 63, Banpo-daero, Seocho-gu, Seoul 137-872, KR
优先权数据:
10-2014-008837214.07.2014KR
标题 (EN) SUBSTRATE STRUCTURE, METHOD FOR FORMING SAME, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR USING SAME
(FR) STRUCTURE DE SUBSTRAT, SON PROCÉDÉ DE FORMATION, ET PROCÉDÉ DE FABRICATION DE SEMI-CONDUCTEUR AU NITRURE L'UTILISANT
(KO) 기판 구조, 그 형성방법, 및 이를 이용한 질화물 반도체 제조방법
摘要: front page image
(EN) Provided are a substrate structure, which can not only reduce stress acting on a nitride semiconductor layer during nitride semiconductor layer growth, but also can form a high-quality nitride semiconductor layer, and which facilitates separation thereof from the substrate, a method for forming the same, a semiconductor stacking structure using the same, a method for forming the same, and a method for manufacturing a nitride semiconductor using the same. The substrate structure according to the present invention comprises: a monocrystalline substrate which is heterogeneous from a nitride semiconductor; and an inorganic thin film comprising leg portions, which contact the substrate such that an integrated cavity is defined between the same and the substrate, and an upper surface portion, which extends from the leg portions and is parallel with the substrate, the inorganic thin film being crystallized in the same crystal structure as the substrate.
(FR) L'invention porte sur une structure de substrat, qui peut non seulement réduire les contraintes s'exerçant sur une couche de semi-conducteur au nitrure pendant la croissance de la couche de semi-conducteur au nitrure, mais peut également former une couche de semi-conducteur au nitrure de haute qualité, et qui facilite sa séparation du substrat, sur son procédé de formation, sur une structure d'empilement semi-conducteur l'utilisant, sur son procédé de formation, et sur un procédé de fabrication d'un semi-conducteur au nitrure l'utilisant. La structure de substrat selon la présente invention comprend : un substrat monocristallin qui est hétérogène et fait d'un semi-conducteur au nitrure ; et un film mince inorganique comprenant des parties pied, qui sont en contact avec le substrat de manière à délimiter une cavité intégrée entre celles-ci et le substrat, et une partie surface supérieure, qui s'étend à partir des parties pied et est parallèle au substrat, le film mince inorganique étant cristallisé dans la même structure cristalline que le substrat.
(KO) 질화물 반도체층 성장시 질화물 반도체층이 받는 응력을 감소시키고 고품질의 질화물 반도체층을 형성할 수 있을 뿐만 아니라 기판과의 분리가 쉽도록 하는 기판 구조 및 그 형성방법, 그리고 이를 이용한 반도체 적층 구조 및 그 형성방법, 그리고 이를 이용한 질화물 반도체 제조방법을 제공한다. 본 발명에 따른 기판 구조는 질화물 반도체와 이종인 단결정 기판; 및 상기 기판과의 사이에 일체화된 빈 공간(cavity)이 정의되도록 상기 기판과 접촉하는 다리부 및 상기 다리부로부터 연장되어 상기 기판과 평행한 상면부를 포함하고 상기 기판과 같은 결정 구조로 결정화된 무기물 박막을 포함한다.
指定国: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
欧亚专利局 (AM, AZ, BY, KG, KZ, RU, TJ, TM)
欧洲专利局 (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
公布语言: 韩语 (KO)
申请语言: 韩语 (KO)