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1. (EP1935027) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Claims

1. A semiconductor device comprising:

a thin film transistor comprising:

a gate electrode (102) over a substrate (101);

a gate insulating film (103) over the gate electrode (102);

a first source or drain electrode (104) over the gate insulating film (103);

an island-shaped semiconductor film (105) over the first source or drain electrode (104); and

a second source or drain electrode (106) over the island-shaped semiconductor film (105) and the first source or drain electrode (104),

wherein the thin film transistor comprises a first portion and a second portion,

wherein a portion of the second source or drain electrode (106) is in direct contact with a portion of the first source or drain electrode (104) in the first portion,

wherein the island-shaped semiconductor film (105) is sandwiched between the first source or drain electrode (104) and the second source or drain electrode (106) in the second portion,

wherein the second source or drain electrode (106) comprises an edge portion, characterized in that all of the edge portion is overlapping with the gate electrode (102),

wherein the edge portion of the second source or drain electrode (106) is in direct contact with the island-shaped semiconductor film (105),

wherein the second source or drain electrode (106) covers an edge of the island-shaped semiconductor film (105),

wherein the substrate (101) is a plastic substrate, a paper substrate or a paper substrate to which a plastic treatment is performed on surfaces thereof, and

wherein a titanium film is used as the first source or drain electrode (104).


  2. The semiconductor device according to claim 1 further comprising:

an island-shaped impurity semiconductor film (122) added with an impurity imparting one conductivity type over the island-shaped semiconductor film (105) such that the second source or drain electrode (106) is provided over the island-shaped semiconductor film (105), the island-shaped impurity semiconductor film (122), and the first source or drain electrode (104),

wherein the island-shaped semiconductor film (105) and the island-shaped impurity semiconductor film (122) are sandwiched between the first source or drain electrode (104) and the second source or drain electrode (106).


  3. The semiconductor device according to claim 2, wherein the impurity imparting one conductivity type is phosphorus or arsenic.
  4. The semiconductor device according to claim 2, wherein the impurity imparting one conductivity type is boron.
  5. A manufacturing method of a semiconductor device according to claim 1 comprising the steps of:

forming a gate electrode (102) over a substrate (101);

forming a gate insulating film (103) over the gate electrode (102);

forming a first source or drain electrode (104) from a titanium film over the gate insulating film (103);

forming an island-shaped semiconductor film (105) over the first source or drain electrode (104); and

forming a second source or drain electrode (106) over the first source or drain electrode (104) and the island-shaped semiconductor film (105), thereby forming a thin film transistor,

wherein the thin film transistor comprises a first portion and a second portion,

wherein a portion of the second source or drain electrode (106) is in direct contact with a portion of the first source or drain electrode (104) in the first portion,

wherein the island-shaped semiconductor film (105) is sandwiched between the first source or drain electrode (104) and the second source or drain electrode (106) in the second portion,

wherein the second source or drain electrode (106) is formed with an edge portion such that all of the edge portion overlaps with the gate electrode (102),

wherein the edge portion of the second source or drain electrode (106) is in direct contact with the island-shaped semiconductor film (105),

wherein the second source or drain electrode (106) is formed to cover an edge of the island-shaped semiconductor film (105), and

wherein the substrate (101) is a plastic substrate, a paper substrate or a paper substrate to which a plastic treatment is performed on surfaces thereof.


  6. The manufacturing method of a semiconductor device according to claim 5, wherein at least one of the gate electrode (102), the gate insulating film (103), the first source or drain electrode (104), the island-shaped semiconductor film (105), and the second source or drain electrode (106) is formed by an inkjet method.
  7. The manufacturing method of a semiconductor device according to claim 5, wherein:

a first conductive film is formed over the substrate (101), the first conductive film being used to form the gate electrode (102);

a second conductive film (111) is formed over the gate insulating film (103) the second conductive film being used to form the first source or drain electrode (104);

a semiconductor film (112) is formed over the first source or drain electrode (104), the semiconductor film (112) being used to form the island-shaped semiconductor film (105); and

a third conductive film (113) is formed over the first source or drain electrode (104) and

the island-shaped semiconductor film (105), the third conductive film (113) being used to form the second source or drain electrode (106).


  8. The manufacturing method of a semiconductor device according to claim 5, further comprising the steps of:

forming an island-shaped impurity semiconductor film (122) added with an impurity imparting one conductivity type over the island-shaped semiconductor film (105) such that the second source or drain electrode (106) is formed over the first source or drain electrode (104), the island-shaped semiconductor film (105), and the island-shaped impurity semiconductor film (122),

wherein the island-shaped semiconductor film (105) and the island-shaped impurity semiconductor film (122) are sandwiched between the first source or drain electrode (104) and the second source or drain electrode (106).


  9. The manufacturing method of a semiconductor device according to claim 8, wherein the impurity imparting one conductivity type is phosphorus or arsenic.
  10. The manufacturing method of a semiconductor device according to claim 8, wherein the impurity imparting one conductivity type is boron.