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1. CN1170441 - 现场吸气泵系统和方法

专利局 中国
申请号 95196957.9
申请日 30.10.1995
公布号 1170441
公布日 14.01.1998
授权号 1177079
授权日 24.11.2004
公布类型 C
国际专利分类
F 机械工程;照明;加热;武器;爆破
04
B
液体变容式机械;泵
37
专门适用于弹性流体的并且其相关特征不包含在F04B 25/00至F04B 35/00组中或与上述各组无关的泵
02
通过吸收或吸附而抽出
C 化学;冶金
23
对金属材料的镀覆;用金属材料对材料的镀覆;表面化学处理;金属材料的扩散处理;真空蒸发法、溅射法、离子注入法或化学气相沉积法的一般镀覆;金属材料腐蚀或积垢的一般抑制
C
金属材料的表面处理
14
通过覆层形成材料的真空蒸发、溅射或离子注入进行镀覆
22
以镀覆工艺为特征的
56
连续镀覆的专用设备;维持真空的装置,例如真空锁定器
F04B 37/02
C23C 14/56
CPC
C23C 14/564
C23C 14/54
C23C 14/56
F04B 37/02
F04B 37/08
申请人 Saes Pure Gas, Inc.
萨伊斯纯汽油有限公司
发明人 D. H. Lorimer
D·H·罗列马
G. P. Krueger
G·P·克鲁格
代理人 ZHOU BEILIN
中国专利代理(香港)有限公司
中国专利代理(香港)有限公司
优先权数据 08332564 31.10.1994 US
标题
(EN) In site getter pump system and method
(ZH) 现场吸气泵系统和方法
摘要
(EN)
A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealing the chamber, flowing a noble gas into the chamber while simultaneously pumping the chamber with an external low pressure pump and with an in situ getter pump disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.

(ZH)

一种晶片处理系统,它包括:处理室,连到处理室用于抽吸惰性和非惰性气体的低压泵,将惰性气体源连到处理室的阀门机构,配置在处理室内的现场吸气泵、此泵在惰性气体流入处理室的过程中抽吸某些非惰性气体,处理机构、用于处理设置在处理室内的晶片。优选地是,现场吸气泵可在几个不同的温度下运行,使得能在这些温度下优选地抽吸不同种类的气体。气体分析器用于自动控制吸气泵的温度,以便控制从处理室中抽吸的气体种类。本发明的处理晶片的方法包括以下步骤:在处理室内放置晶片并密封处理室、惰性气体流入处理室而利用外部低压泵和配置在室内抽吸非惰性气体的现场吸气泵同时抽吸处理室,并且处理室内的晶片而惰性气体继续流动。该方法优选地还包括以下步骤:监测室内的气体组成并在组成分析的基础上控制吸气剂材料的温度。

其他公布号
MXPA/a/2000/010004
MXPA/a/2000/010005
MXPA/a/2000/010006