此应用程序的某些内容目前无法使用。
如果这种情况持续存在,请联系我们反馈与联系
1. (US20120097964) Semiconductor device including first and second or drain electrodes and manufacturing method thereof

专利局 : 美国
申请号: 13343474 申请日: 04.01.2012
公布号: 20120097964 公布日: 26.04.2012
授权号: 08785990 授权日: 22.07.2014
公布类型: B2
国际专利分类:
H01L 29/76
H01L 21/00
H01L 29/417
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
29
专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件
66
按半导体器件的类型区分的
68
只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的
76
单极器件
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
21
专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
29
专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件
40
按其电极特征区分的
41
以其形状、相对尺寸或位置为特征的
417
通有待整流、放大或切换电流的
申请人: Honda Tatsuya
Semiconductor Energy Laboratory Co., Ltd.
发明人: Honda Tatsuya
代理人: Husch Blackwell LLP
优先权数据: 2005-300825 14.10.2005 JP
标题: (EN) Semiconductor device including first and second or drain electrodes and manufacturing method thereof
摘要: front page image
(EN)

An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.


也发表为:
US20100264420US20140326998