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1. (US08530978) High current high voltage GaN field effect transistors and method of fabricating same

专利局 : 美国
申请号: 13312406 申请日: 06.12.2011
公布号: 08530978 公布日: 10.09.2013
授权号: 08530978 授权日: 10.09.2013
公布类型: B1
国际专利分类:
H01L 29/66
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
29
专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件
66
按半导体器件的类型区分的
申请人: Chu Rongming
HRL Laboratories, LLC
Li Zijian “Ray”
Boutros Karim S.
Burnham Shawn
发明人: Chu Rongming
Li Zijian “Ray”
Boutros Karim S.
Burnham Shawn
代理人: Ladas & Parry
优先权数据:
标题: (EN) High current high voltage GaN field effect transistors and method of fabricating same
摘要: front page image
(EN)

A field effect transistor (FET) having a source contact to a channel layer, a drain contact to the channel layer, and a gate contact on a barrier layer over the channel layer, the FET including a dielectric layer on the barrier layer between the source contact and the drain contact and over the gate contact, and a field plate on the dielectric layer, the field plate connected to the source contact and extending over a space between the gate contact and the drain contact and the field plate comprising a sloped sidewall in the space between the gate contact and the drain contact.