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1. (WO2008120482) MAGNETIC RANDOM ACCESS MEMORY

Pub. No.:    WO/2008/120482    International Application No.:    PCT/JP2008/050574
Publication Date: 2008-10-9 International Filing Date: 2008-1-18
IPC: H01L 21/8246
G11C 11/15
H01L 27/105
H01L 29/82
H01L 43/08
Applicants: NEC CORPORATION
日本電気株式会社
KATOU, Yuukou
加藤 有光
OHSHIMA, Norikazu
大嶋 則和
Inventors: KATOU, Yuukou
加藤 有光
OHSHIMA, Norikazu
大嶋 則和
Title: MAGNETIC RANDOM ACCESS MEMORY
Abstract:
An MRAM comprises a magnetoresistance element (1). The magnetoresistance element (1) comprises a first magnetic material layer (10) including a first region (11) whose magnetization direction is reversible, a second magnetic material layer (30) whose magnetization direction is fixed in parallel with a magnetization easy axis direction of the first region (11), and a nonmagnetic material layer (20) sandwiched between the first magnetic material layer (10) and the second magnetic material layer (30). A domain wall (DW) is formed at at least one end of the first region (11) of the first magnetic material layer (10). The second magnetic material layer (30) is formed so as to overlap with the first region (11) and the one end. When data is written, a write current is applied between the first magnetic material layer (10) and the second magnetic material layer (30).