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1.1020000065684COMPETER SYSTEM REDUCING POWER CONSUMPTION
KR 15.11.2000
CIP G06F 1/32
GFÍSICA
06CÔMPUTO; CÁLCULO; CONTAGEM
FPROCESSAMENTO ELÉTRICO DE DADOS DIGITAIS
1Detalhes não abrangidos pelo grupos G06F3/-G06F13/88
26Meios para alimentação de energia elétrica, p. ex. regulação da mesma
32Meios destinados a economizar energia
№ do pedido 1019990012283 Requerente HYUNDAI ELECTRONICS IND. CO., LTD. Inventor KIM, DONG YEOL

PURPOSE: A computer system is provided to maintain a cache memory in a power down mode in that case that a cache miss occurs in order to reduce the power consumption of the cache memory.

CONSTITUTION: A computer system comprises a CPU(100), a cache memory(130), a tag RAM(110), and a cache controller(120). The CPU(100) processes instructions in response to clock signals, and generates an address for an external data access request. The cache memory(130) stores frequently used data. The tag RAM(110) compares the address with a tag information on the data stored in the cache memory(130), and generates a cache hit or a cache miss signal. The cache controller(120) is driven in response to a first clock signal, and generates a second clock signal in response to the cache hit and cache miss signal to control an operation of the cache memory(130). The cache controller(120) includes a triggering device triggering the cache hit or the cache miss signal in response to the first clock signal, and a second clock signal generator selecting a DC level or the first clock signal in response to a selection signal from the triggering device.

COPYRIGHT 2001 KIPO

2.1020000065674METHOD FOR OPERATING COMMUNICATION BY WIRELESS PROTOCOL OF NEXT GENERATION MOBILE COMMUNICATION SYSTEM
KR 15.11.2000
CIP H04L 12/56
HELECTRICIDADE
04TÉCNICA DE COMUNICAÇÃO ELÉTRICA
LTRANSMISSÃO DE INFORMAÇÃO DIGITAL, p. ex. COMUNICAÇÃO TELEGRÁFICA
12Redes caracterizadas pela função de comutação
54Sistemas de comutação armazena e encaminha ("store-and-forward")
56Sistemas de comutação por pacotes (packet)
№ do pedido 1019990012255 Requerente LG INFORMATION & COMMUNICATIONS LTD. Inventor HWANG, IN TAE

PURPOSE: A method for operating communication by a wireless protocol of a next generation mobile communication system, is provided that a radio link control layer(RLC) efficiently perform radio link control between an upper layer, a radio resource control layer(RRC) and a lower layer, a medium access control layer(MAC) according to data transmission modes.

CONSTITUTION: A radio link control layer-transparent(RLC-T) entity segments a service data unit(SDU) delivered from an upper layer into many protocol data units(PDUs) to transmit the segmented units to a lower layer, or re-assembles the PDUs received from the lower layer into the SDU to transmit the reassembled unit to the upper layer. An RLC-unacknowledged entity segments the SDU delivered from the upper layer into many PDUs and performs framing by inserting header into the segmented units, then transmit the framed units to the lower layer. Or the RLC-unacknowledged entity separates header of the PDUs received from the lower layer and reassembles the separated units into the SDU according to detection of errors, then delivers the reassembled unit to the upper layer. An RLC-acknowledged entity has blocks to correct or retransmit for corresponding PDUs according to errors of each PDU received from the lower layer. A multiplexing/demultiplexing block multiplexes/demultiplexes delivered PDUs to connect parts of the RLC entities to the lower layer through many logic channels.

COPYRIGHT 2001 KIPO

3.1020000065714METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KR 15.11.2000
CIP H01L 21/32
HELECTRICIDADE
01ELEMENTOS ELÉTRICOS BÁSICOS
LDISPOSITIVOS SEMICONDUTORES; DISPOSITIVOS ELÉTRICOS DE ESTADO SÓLIDO NÃO INCLUÍDOS EM OUTRO LOCAL
21Processos ou aparelhos especialmente adaptados para a manufatura ou tratamento dos dispositivos semicondutores ou de dispositivos de estado sólido ou de partes dos mesmos
02Fabricação ou tratamento de dispositivos semicondutores ou de partes dos mesmos
04tendo o dispositivo, pelo menos, uma barreira de potencial ou uma barreira de superfície, p. ex. junção PN, camada de depleção, camada de concentração de portadores de carga
18os dispositivos possuindo corpos semicondutores constituídos de elementos do Grupo IV do Sistema Periódico ou compostos AIIIBV com ou sem impurezas, p. ex. materiais de dopagem
30Tratamento de corpos semicondutores usando processos ou aparelhos não incluídos nos grupos H01L21/20-H01L21/26143
31para formar camadas isolantes nos mesmos, p. ex. para mascarar ou usando técnicas fotolitográficas; Pós-tratamento dessas camadas; Seleção de materiais para estas camadas
32usando máscaras
№ do pedido 1019990012328 Requerente HYUNDAI MICRO ELECTRONICS CO., LTD. Inventor JUNG, SANG MU

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize a step difference and to reduce a resistance value of a node contact and a bit line contact, by forming a first gate in a semiconductor substrate to omit the process forming a sidewall and an interlayer dielectric.

CONSTITUTION: After a buffer oxidation layer and a nitride layer are sequentially formed on a semiconductor substrate(31), the nitride layer, buffer oxidation layer and semiconductor substrate are etched to have a first gate overlap a bit line contact mask on the nitride layer. A PGI mask is formed to etch the nitride layer, oxidation layer and semiconductor substrate in an exposed region. An insulating layer(34) is filled in the etched region of the substrate after forming an insulating layer. A well(35) is formed by injecting impurity ions through the buffer oxidation layer and insulating layer after eliminating the nitride layer. The insulating layer filled in the etched region of the substrate is selectively etched. N-type impurity ions are injected to the substrate corresponding to a bit line contact region of a cell. A gate oxidation layer(38), a doped polysilicon layer(39) and WSix layer(40) are sequentially formed in the etched region to form a first gate. A source/drain(41) are formed by injecting high and low density impurity ions. A cap oxidation layer(42) and a cap nitride layer(43) are sequentially formed, and are selectively etched by having a node contact overlap a bit line contact mask on the cap nitride layer.

COPYRIGHT 2001 KIPO

4.1020000065724NET TYPE FLOATING WAVE ABSORBER BY USING DOLPHIN TYPE DIVING UNIT
KR 15.11.2000
CIP E02B 3/06
ECONSTRUÇÕES FIXAS
02ENGENHARIA HIDRÁULICA; FUNDAÇÕES; TERRAPLENAGEM
BENGENHARIA HIDRÁULICA
3Trabalhos de engenharia relativos ao controle ou à uso de cursos d'água, rios, costas ou outros terrenos de marinha; Vedações ou juntas para trabalhos de engenharia em geral
04Estruturas ou aparelhos ou métodos de proteção de barrancos, costas ou portos
06Molhes; Embarcadouros; Cais; Muralhas de cais; Diques; Quebra-mares
№ do pedido 1019990012341 Requerente PLUS INTERNATIONAL CO., LTD. Inventor CHOI, BYEONG GIL

PURPOSE: A net type floating wave absorber is provided to have a wave absorptive function of more than 80% of wave absorptive efficiency in a short wave length and more than 50% in a long wave length.

CONSTITUTION: A dolphin type diving unit is integrally produced and forcibly dived. The dolphin type diving unit is fixed under the seawater by applying a mooring system. A floating wave absorber is installed in each dolphin. Accordingly, each float performs a heave motion along the dolphin on the water surface so that the energy of waves is dispersed and exterminated and the waves are blocked.

COPYRIGHT 2001 KIPO

5.1020000065734DC MOTOR USING SOLAR CELL
KR 15.11.2000
CIP H02K 29/00
HELECTRICIDADE
02PRODUÇÃO, CONVERSÃO OU DISTRIBUIÇÃO DE ENERGIA ELÉTRICA
KMÁQUINAS DÍNAMO-ELÉTRICAS
29Motores ou geradores possuindo dispositivos de comutação não-mecânicos, p. ex. válvulas de descarga ou dispositivos semicondutores
№ do pedido 1019990012361 Requerente KWEON, HO YOUNG Inventor KWEON, HO YOUNG

PURPOSE: A DC motor using solar cell is provided to disperse the initial drive load of the DC motor to utilize of a solar light cell plate of small size and generate power even where commercial power supply is supplied.

CONSTITUTION: A DC motor using solar cell comprises a solar light cell plate(2), a PCB(3), a DC motor rotor(4), a magnet rotor(6) and a rotary body(7). The solar light cell plate(2) generates DC electricity using solar light. The PCB(3) drives the DC motor rotor(4) using the DC electricity generated by the plate(2) without using a brush. The rotor(4) is rotated under the control of the PCB. The magnet rotor(6) is coupled to a drive shaft(5) of the rotor(4). The rotary body(7) is inserted within the rotor(6) with a gap. The rotor(6) is a cylindrical permanent magnet.

COPYRIGHT 2001 KIPO

6.1020000065754METHOD FOR MANUFACTURING FINE PATTERN OF SEMICONDUCTOR DEVICE
KR 15.11.2000
CIP H01L 21/30
HELECTRICIDADE
01ELEMENTOS ELÉTRICOS BÁSICOS
LDISPOSITIVOS SEMICONDUTORES; DISPOSITIVOS ELÉTRICOS DE ESTADO SÓLIDO NÃO INCLUÍDOS EM OUTRO LOCAL
21Processos ou aparelhos especialmente adaptados para a manufatura ou tratamento dos dispositivos semicondutores ou de dispositivos de estado sólido ou de partes dos mesmos
02Fabricação ou tratamento de dispositivos semicondutores ou de partes dos mesmos
04tendo o dispositivo, pelo menos, uma barreira de potencial ou uma barreira de superfície, p. ex. junção PN, camada de depleção, camada de concentração de portadores de carga
18os dispositivos possuindo corpos semicondutores constituídos de elementos do Grupo IV do Sistema Periódico ou compostos AIIIBV com ou sem impurezas, p. ex. materiais de dopagem
30Tratamento de corpos semicondutores usando processos ou aparelhos não incluídos nos grupos H01L21/20-H01L21/26143
№ do pedido 1019990012383 Requerente HYUNDAI ELECTRONICS IND. CO., LTD. Inventor JUNG, JAE CHANG

PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to prevent a pattern defect caused by amine, by increasing the temperature of a photoresist layer higher than 30°C while the photoresist layer is transferred from a storage bath to an injection nozzle, so that a good pattern is formed even if a post exposure bake is delayed.

CONSTITUTION: A semiconductor substrate is prepared. The semiconductor substrate is preprocessed. Photoresist is applied on the semiconductor substrate while a storage temperature is increased to 30-80°C. An exposure process is performed regarding the photoresist layer. A post exposure bake is performed regarding the photoresist layer. The photoresist layer is developed to form a photoresist layer pattern.

COPYRIGHT 2001 KIPO

7.1020000065764TOOTHPASTE USING CORTEX OF ROOT OR STEM OF ACANTHOPANACIS SHOWING GOOD STAMINA, STRENGTH, RECOVERY FROM FATIGUE, AND GIVING GOOD EFFECT ON A MAN WHO SHOWS FAILING OF MEMORY, WEAKNESS ON BONES OF WAIST AND LEG, DIFFICULTY IN WALKING
KR 15.11.2000
CIP A61K 7/26
ANECESSIDADES HUMANAS
61CIÊNCIA MÉDICA OU VETERINÁRIA; HIGIENE
KPREPARAÇÕES PARA FINALIDADES MÉDICAS, ODONTOLÓGICAS OU HIGIÊNICAS
7Cosmetics or similar toilet preparations
16Preparations for cleaning the teeth or mouth, e.g. tooth-pastes; Mouthwashes
26Preparations containing plant or animal extracts, e.g. chlorophyll
№ do pedido 1019990012399 Requerente LEE, CHANG JIN Inventor LEE, CHANG JIN

PURPOSE: A toothpaste using Cortex of root or stem of Acanthopanacis is provided, in which the Cortex of root or stem of Acanthopanacis shows good stamina, strength, recovery from fatigue, and gives good effect on a man who shows failing of memory, weakness on bones of waist and leg, difficulty in walking.

CONSTITUTION: A process for the preparation of toothpaste using Cortex of root or stem of Acanthopanacis comprises of: preparing fine powder of the Cortex of root or stem of Acanthopanacis; adding the powder of Cortex of root or stem of Acanthopanacis to a toothpaste to prepare a good toothpaste for human health.

COPYRIGHT 2001 KIPO

8.1020000065774MANUFACTURING METHOD OF MAGNESIA CRUCIBLE
KR 15.11.2000
CIP C04B 33/24
CQUÍMICA; METALURGIA
04CIMENTO; CONCRETO; PEDRA ARTIFICIAL; CERÂMICA; REFRATÁRIOS
BCAL; MAGNÉSIA; ESCÓRIA; CIMENTOS; SUAS COMPOSIÇÕES, p. ex. ARGAMASSA, CONCRETO OU MATERIAIS DE CONSTRUÇÕES SIMILARES; PEDRA ARTIFICIAL; CERÂMICA; REFRATÁRIOS; TRATAMENTO DA PEDRA NATURAL
33Artigos de argila
24Manufatura de porcelanas ou faianças
№ do pedido 1019990012411 Requerente KIM, CHUL HONG Inventor HWANG, GWANG TAEK

PURPOSE: A manufacturing method of magnesia crucible by using slip casting is provided. The magnesia crucible has no cracks and more than 95% of density by adding organic additives and sintering aids.

CONSTITUTION: The method comprises the steps of: forming the crucible with slurry containing 40wt.%-70wt.% of solid content by the slip casting method within 2hrs.; drying for 24hrs. or more; elevating temperature to 450°C at a rate of 2-5°C/min and holding 1hr; sintering at 1600-1750°C for 2-5hrs.; furnace cooling. The slurry contains an effective amount of magnesia as a main material, 0.5-5wt.% of organic binder, 0.5-5wt.% of organic plasticizer, 0.5-5wt.% of dispersing agent, and 1-4wt.% of sintering aids such as CaO and SiO2, in which wt.% is based on the weight of raw materials. The organic binder is poly vinyl alcohol, poly acrylic acid poly methyl acrylic acid and poly ethylene oxide. The organic plasticizer is ethylene glycol, glycerol, dibutyl phthalate and dimethyl phthalate. The organic dispersing agent is sodium polyacylate, ammonium polyacylate, sodium succinate, ammonium citrate.

COPYRIGHT 2001 KIPO

9.1020000065784SEMICONDUCTOR MEMORY DEVICE
KR 15.11.2000
CIP G11C 29/00
GFÍSICA
11ARMAZENAMENTO DE INFORMAÇÕES
CMEMÓRIAS ESTÁTICAS
29Teste do funcionamento correto das memórias; Teste das memórias durante a operação offline ou de standby
№ do pedido 1019990012451 Requerente HYUNDAI ELECTRONICS IND. CO., LTD. Inventor JUNG, YONG GWON

PURPOSE: A semiconductor memory device is provided which maximizes the efficiency by reducing the required test time and cost, by increasing the maximum number of dies which can be tested with a fixed input/output channel.

CONSTITUTION: A semiconductor memory device performs a high speed test operation, being applied in a RAMBUS DRAM and a SYNC DRAM and DDR. The semiconductor memory device reduces the number of data input/output pads which are activated regarding as to the read operation during DA mode performing the repair as to the defective cell. The semiconductor memory device comprises: a first and a second data shift registers(10,12) which shifts a first and a second data signals each read from a memory cell according to a control clock signal and transfers them to an output driver; a first switching unit(30) which is connected to the output driver, and transfers the corresponding data signal to each output pad by being switched when an activated operation mode(DA mode) which tests only core cell and performs repair as to a defective cell is applied; a second switching unit(32) which is connected to the output driver in parallel with the first switching unit, and is switched when an activated DA mode judgement signal is applied; a selection unit(40) which selects the first and the second data signals received via the second switching unit by a selection control signal applied from the external and transfers one signal to the corresponding output pad; and an activation control units(50,52) generating each control clock signal controlling the activation of the first and the second shift register by assembling the external clock signal and the DA mode judgement signal and the selection control signal.

COPYRIGHT 2001 KIPO

10.1020000065834METHOD FOR DRIVING MICROWAVE PLASMA DISPLAY PANEL
KR 15.11.2000
CIP G09G 3/28
GFÍSICA
09EDUCAÇÂO; CRIPTOGRAFIA; APRESENTAÇÃO VISUAL; ANÚNCIOS; LOGOTIPOS
GDISPOSIÇÕES OU CIRCUITOS PARA CONTROLE DE DISPOSITIVOS INDICADORES UTILIZANDO MEIOS ESTÁTICOS PARA APRESENTAÇÃO DA INFORMAÇÃO VARIÁVEL
3Disposições de controle ou circuitos, de interesse somente em conexão com indicadores visuais outros que não tubos de raios catódicos
20para apresentação de um conjunto de uma série de caracteres, p. ex. uma página, para se compor o conjunto mediante a combinação de elementos individuais dispostos numa matriz
22usando-se fontes de luz controlada
28usando-se painéis de descarga de gás, p. ex. de plasma
№ do pedido 1019990012539 Requerente LG ELECTRONICS INC. Inventor CHOI, JEONG PIL

PURPOSE: A method for driving a microwave plasma display panel is provided to stabilize a system and to perform a high-speed driving by adjusting a power level of a microwave signal applied to a panel in the case of a microwave discharge operation.

CONSTITUTION: A method for driving a microwave plasma display panel performs address discharge and a microwave discharge for embodying a grey level. In the case of a microwave discharge operation, a power level of a microwave signal being applied to a panel is adjusted. In order to adjust a power level of the microwave signal, an impedance value of the panel is varied. The impedance value of the panel is varied by turning on/off the ground line. Thereby, a system is stabilized and a high-speed driving is performed.

COPYRIGHT 2001 KIPO