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1. (WO2018160844) COMPUTED TOMOGRAPHY USING INTERSECTING VIEWS OF PLASMA USING OPTICAL EMISSION SPECTROSCOPY DURING PLASMA PROCESSING
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CLAIMS

1 , A plasma optical emission spectrographic (OES) system comprising: a first array of multiple OES optical detectors configured to have a first line-of-sight view of plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system;

a second array of multiple OES optical detectors configured to have a second iine~of~sight view of plasma in the etch chamber,

wherein, relative to each other, the first iine-of-sight view and second line-of-sight view intersect within the etch chamber and are non-coextensive, non-parallel, and non-orthogonal.

2, A plasma OES system as recited in claim 1 , wherein a central axis of each OES optical detector of a particular array is configured in parallel alignment with the other optical detectors of the same array.

3, A plasma OES system as recited in claim 1 , wherein the first and second Iine-of-sight views are separated by an acute or an obtuse angle.

4, A plasma OES system as recited in claim 1 , further comprising:

a first viewport configured to provide the first iine-of-sight view to the etch chamber for the first array of multiple OES optical detectors;

a second viewport configured to provide the second Iine-of-sight view to the etch chamber for the second array of multiple OES optical detectors.

5, A plasma OES system as recited in claim 1 , further comprising:

a first viewport configured to provide the first iine-of-sight view to the etch chamber for the first array of multiple OES optical detectors;

a second viewport configured to provide the second Iine-of-sight view to the etch chamber for the second array of multiple OES optical detectors,

wherein the first and second viewport have a width at least as wide as a width of the substrate holder.

6. A plasma OES system as recited in claim 1 , wherein each OES optical detector includes one spectrometer that is configured to observe one ray from the etch chamber, wherein the ray shares a common central axis with its optical detector.

7, A plasma OES system as recited in claim 1 , wherein each OES optical detector includes multiple spectrometers, each spectrometer of each OES optical detector is configured to observe one ray from the etch chamber.

8, A plasma OES system as recited in claim 1 , wherein each OES optical detector includes multiple spectrometers, wherein the spectrometers of each OES optical detector collectively observe a fan of rays from the etch chamber.

9, A plasma OES system as recited in claim 1 , further comprising a third array of multiple OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views.

10. A plasma OES system as recited in claim 1 , further comprising:

a third array of multiple OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views;

a third viewport configured to provide the third line-of-sight view to the etch chamber for the third array of multiple OES optical detectors.

11. A plasma OES system as recited in claim 1 , wherein the substrate is a semiconductor wafer.

12. A plasma OES system as recited in claim 1 , wherein at least one of the arrays includes at least one-hundred twenty-eight (128) OES optical detectors and/or wherein at least one of the OES optical detector includes at least one-hundred twenty-eight (128) OES spectrometers,

13. A computed tomography system comprising:

a plasma OES system as recited in claim 1 ;

a computed tomographic reconstruction system configured to generate a computed tomographic reconstruction of chemical species of the plasma, wherein the generation of the computed tomographic reconstruction includes:

obtaining light measurements from light received from intersecting views of the first and second line-of-sight views;

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements;

associating the determined locations in the plasma for one or more of the identified chemical species.

14. A computed tomography system for a plasma optical emission spectrography (OES), the system comprising:

a plasma OES subsystem that includes:

one or more first OES optical detectors configured to have a first line-of- sight view of plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system;

one or more second OES optical defectors configured to have a second line-of-sight view of plasma in the etch chamber, wherein, relative to each other, the first line-of-sight view and second line-of-sight view intersect within the etch chamber;

a computed tomographic reconstruction system configured to generate a computed tomographic reconstruction of chemical species of the plasma, wherein the generation of the computed tomographic reconstruction includes:

obtaining light measurements from light received from intersecting views

of the first and second iine-of-sight views;

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements;

associating the determined locations in the plasma for one or more of the identified chemical species.

15. A plasma OES system as recited in claim 14, wherein, relative to each other, the first Iine-of-sight view and second Iine-of-sight view are non-coextensive, non-parallel, and non-orthogonal.

16. A plasma OES system as recited in claim 14, wherein the light measurements obtained includes intensity of light.

17. A plasma OES system as recited in claim 14, wherein the light measurements obtained includes light measurements for particular wavelengths of light or wherein the light measurements obtained includes light measurements for a particular band of wavelengths of light.

18. A plasma OES system as recited in claim 14, wherein:

multiple first OES optical detectors form a first array, wherein a central axis of each OES optical detector of the first array is configured in parallel alignment with the other optical detectors of the first array;

multiple second OES optical detectors form a second array, wherein a central axis of each OES optical detector of the second array is configured in parallel alignment with the other optical detectors of the second array.

19. A plasma OES system as recited in claim 14, wherein the first and second Iine-of-sight views are separated by an acute or an obtuse angle.

20. A plasma OES system as recited in claim 14 further comprising:

a first viewport configured to provide the first Iine-of-sight view to the etch chamber for the one or more first OES optical detectors; and

a second viewport configured to provide the second Iine-of-sight view to the etch chamber for the one or more second OES optical detectors.

21. A plasma OES system as recited in claim 14 further comprising:

a first viewport configured to provide the first iine-of-sight view to the etch chamber for the one or more first OES optical detectors; and

a second viewport configured to provide the second Iine-of-sight view to the etch chamber for the one or more second OES optical detectors;

wherein the first and second viewport have a width at least as wide as a width of the substrate holder,

22. A plasma OES system as recited in claim 14, wherein each OES optical detector includes one spectrometer that is configured to observe one ray from the etch chamber, wherein the ray shares a common central axis with its optical detector; or wherein each OES optical detector includes multiple spectrometers, each spectrometer of each OES optical detector is configured to observe one ray from the etch chamber; or

wherein each OES optical detector includes multiple spectrometers, wherein the spectrometers of each OES optical detector collectively observe a fan of rays from the etch chamber.

23. A plasma OES system as recited in claim 14, further comprising one or more third OES optical detectors configured to have a third iine-of-sight view of plasma in the etch chamber, wherein the third Iine-of-sight view intersects the first and second iine-of-sight views within the etch chamber and the third Iine-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second Iine-of-sight views.

24. A plasma OES system as recited in claim 14, further comprising:

one or more third OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third !ine-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views; and

a third viewport configured to provide the third line-of-sight view to the etch chamber for the one or more third OES optical detectors.

25. A method that facilitates computed tomographic reconstruction of plasma during plasma processing of a substrate in a plasma etch chamber of a plasma processing system, the method comprising:

obtaining light measurements from a collection of optical detectors configured to receive incoming rays from plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system, wherein the rays form an intersecting grid within the plasma;

generating a computed tomographic reconstruction of chemical species of the plasma, wherein the generating includes:

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements; and

associating the determined locations in the plasma for one or more of the identified chemical species.