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1. (WO2017142636) ALTERNATING ANTI-PARALLEL DIODE MIXER STRUCTURE
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№ de pub.: WO/2017/142636 № do pedido internacional: PCT/US2017/012095
Data de publicação: 24.08.2017 Data de depósito internacional: 04.01.2017
CIP:
H03D 7/02 (2006.01)
H ELECTRICIDADE
03
CIRCUITOS ELETRÔNICOS BÁSICOS
D
DEMODULAÇÃO OU TRANSFERÊNCIA DE MODULAÇÃO DE UMA ONDA PORTADORA PARA OUTRA
7
Transferência de modulação de uma portadora para outra, p. ex., mudança de frequência
02
por meio de diodos
Requerentes:
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC. [US/US]; 100 Chelmsford Street Lowell, MA 01851, US
Inventores:
CONVERT, Emmanuelle; AU
MAHON, Simon; AU
HARVEY, James; AU
Mandatário:
PERILLA, Jason, M.; US
Dados da prioridade:
15/044,40716.02.2016US
Título (EN) ALTERNATING ANTI-PARALLEL DIODE MIXER STRUCTURE
(FR) STRUCTURE DE MÉLANGEUR À DIODES ANTIPARALLÈLES ALTERNÉES
Resumo:
(EN) An apparatus includes a first circuit and a second circuit. The first circuit may be in a substrate and generally includes a first diode and a second diode (i) connected as anti-parallel diodes and (ii) physically adjacent to each other in the substrate. The second circuit may be in the substrate and generally includes a third diode and a fourth diode (i) connected as anti-parallel diodes and (ii) physically adjacent to each other in the substrate. The first circuit and the second circuit may be (a) connected in parallel, (b) physically adjacent to each other in the substrate and (c) configured to mix two input signals to generate an output signal. Each neighboring physical structure in the first circuit and the second circuit that forms a diode junction may be physically oriented in an opposite direction along a surface of the substrate.
(FR) L'invention concerne un appareil qui comprend un premier circuit et un second circuit. Le premier circuit peut être dans un substrat et comprend généralement une première diode et une deuxième diode (i) connectées comme des diodes antiparallèles et (ii) physiquement adjacentes l'une à l'autre dans le substrat. Le second circuit peut être dans le substrat et comprend généralement une troisième diode et une quatrième diode (i) connectées comme des diodes antiparallèles et (ii) physiquement adjacentes l'une à l'autre dans le substrat. Le premier circuit et le second circuit peuvent être (a) connectés en parallèle, (b) physiquement adjacents l'un à l'autre dans le substrat, et (c) configurés pour mélanger deux signaux d'entrée afin de générer un signal de sortie. Les structures physiquement voisines dans le premier circuit et le second circuit qui forment une jonction de diodes peuvent être physiquement orientées dans des sens contraires le long d'une surface du substrat.
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Estados designados: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
Organização Regional Africana da Propriedade Intelectual (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Instituto Eurasiático de Patentes (AM, AZ, BY, KG, KZ, RU, TJ, TM)
Instituto Europeu de Patentes (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
Organização Africana da Propriedade Intelectual (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Língua de publicação: inglês (EN)
Língua de depósito: inglês (EN)