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1. (WO2007084879) LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME

Pub. No.:    WO/2007/084879    International Application No.:    PCT/US2007/060544
Publication Date: Fri Jul 27 01:59:59 CEST 2007 International Filing Date: Tue Jan 16 00:59:59 CET 2007
IPC: H01L 21/00
H01L 21/44
H01L 21/77
H01L 21/302
H01L 21/306
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
ERTURK, Mete
GROVES, Robert, A.
JOHNSON, Jeffrey, B.
JOSEPH, Alvin, J.
LIU, Qizhi
SPROGIS, Edmund, J.
STAMPER, Anthony, K.
Inventors: ERTURK, Mete
GROVES, Robert, A.
JOHNSON, Jeffrey, B.
JOSEPH, Alvin, J.
LIU, Qizhi
SPROGIS, Edmund, J.
STAMPER, Anthony, K.
Title: LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME
Abstract:
A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).