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1. (WO2014164062) METHOD OF MAKING A VERTICAL NAND DEVICE USING SEQUENTIAL ETCHING OF MULTILAYER STACKS
Dados bibliográficos mais recentes no arquivo da Secretaria Internacional   

№ de pub.:    WO/2014/164062    № do pedido internacional:    PCT/US2014/020290
Data de publicação: 09.10.2014 Data de depósito internacional: 04.03.2014
CIP:
H01L 21/822 (2006.01), H01L 27/06 (2006.01), H01L 29/788 (2006.01), H01L 29/792 (2006.01), H01L 27/115 (2006.01)
Requerentes: SANDISK TECHNOLOGIES, INC. [US/US]; Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 (US)
Inventores: MAKALA, Raghuveer S.; (US).
LEE, Yao-Sheng; (US).
PACHAMUTHU, Jayavel; (US).
ALSMEIER, Johann; (US).
CHIEN, Henry; (US)
Mandatário: RADOMSKY, Leon; The Marbury Law Group, PLLC 11800 Sunrise Valley Drive 15th Floor Reston, Virginia 20191 (US)
Dados da prioridade:
61/776,953 12.03.2013 US
13/933,743 02.07.2013 US
Título (EN) METHOD OF MAKING A VERTICAL NAND DEVICE USING SEQUENTIAL ETCHING OF MULTILAYER STACKS
(FR) PROCÉDÉ DE FABRICATION D'UN COMPOSANT NAND VERTICAL EN UTILISANT LA GRAVURE SÉQUENTIELLE DE PILES MULTICOUCHES
Resumo: front page image
(EN)A method of making a vertical NAND device includes forming a lower portion of a memory stack over a substrate, forming a lower portion of memory openings in the lower portion of the memory stack, and at least partially filling the lower portion of the memory openings with a sacrificial material. The method also includes forming an upper portion of the memory stack over the lower portion of the memory stack and over the sacrificial material, forming an upper portion of the memory openings in the upper portion of the memory stack to expose the sacrificial material in the lower portion of the memory openings, removing the sacrificial material to connect the lower portion of the memory openings with a respective upper portion of the memory openings to form continuous memory openings, and forming a semiconductor channel in each continuous memory opening.
(FR)L'invention concerne un procédé de fabrication d'un composant NAND vertical comprenant la formation d'une portion inférieure d'une pile de mémoire sur un substrat, la formation d'une portion inférieure d'ouvertures de mémoire dans la portion inférieure de la pile de mémoire, et le remplissage au moins partiel de la portion inférieure des ouvertures de mémoire avec un matériau sacrificiel. Le procédé comprend également la formation d'une portion supérieure de la pile de mémoire sur la portion inférieure de la pile de mémoire et sur le matériau sacrificiel, la formation d'une portion supérieure des ouvertures de mémoire dans la portion supérieure de la pile de mémoire pour exposer le matériau sacrificiel dans la portion inférieure des ouvertures de mémoire, le retrait du matériau sacrificiel pour connecter la portion inférieure des ouvertures de mémoire avec une portion supérieure correspondante des ouvertures de mémoire pour former des ouvertures de mémoire continues, et la formation d'un canal semiconducteur dans chaque ouverture de mémoire continue.
Estados designados: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Língua de publicação: English (EN)
Língua de depósito: English (EN)