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1. (WO2019067084) RADIO FREQUENCY POWER AMPLIFIER
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WHAT IS CLAIMED IS:

1. An amplifier, comprising:

a Field Effect Transistor (FET);

a Radio Frequency (RF) power level detector circuit for producing a control signal in accordance with a power level of an RF input signal, such control signal indicating whether the power level of the input signal is within a predetermined range of power levels greater than zero; and

a bias circuit, fed by the control signal, for producing a fixed bias voltage at a gate electrode of the FET to establish a predetermined quiescent current for the FET when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels greater than zero and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.

2. An amplifier, comprising:

an RF power level detector circuit/a control circuit fed by an input signal, for producing a control signal in accordance with a power level of an RF input signal, such control signal indicating whether the power level of the input signal is within a predetermined range of power levels greater than zero;

an amplifier section, comprising:

a field effect transistor having a gate for controlling a flow of carriers between a drain and a source of the field effect transistor; and

a voltage source coupled to the drain;

a reference potential connected to the source;

wherein the drain provides an output for the amplifier section; and wherein the input signal is fed to the gate; and

a bias circuit fed by the control circuit for producing a fixed bias to the gate to establish a predetermined drain quiescent current (Idq) for the field effect transistor when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.

3. The amplifier recited in claim 1 wherein the Field Effect Transistor (FET), the Radio Frequency (RF) power level detector circuit; and the bias circuit, are formed on a single Monolithic Microwave Integrated Circuit (MMIC) chip.

4. The amplifier recited in claim 2 wherein the RF power level detector circuit/a control circuit, the amplifier section, and the bias circuit, are formed on a single Monolithic Microwave Integrated Circuit (MMIC) chip.