이 애플리케이션의 일부 콘텐츠는 현재 사용할 수 없습니다.
이 상황이 계속되면 다음 주소로 문의하십시오피드백 및 연락
1. (WO2019064172) PHOTORESIST PATTERNING ON SILICON NITRIDE
유의사항: 이 문서는 자동 광학문자판독장치(OCR)로 처리된 텍스트입니다. 법률상의 용도로 사용하고자 하는 경우 PDF 버전을 사용하십시오

CLAIMS

1 . A method comprising:

dissolving a plurality of polymer brushes in a casting solvent, wherein the polymer brushes contain a first constituent unit and a second constituent unit;

coating the solution of the plurality of polymer brushes onto a silicon nitride surface;

bonding the plurality of polymer brushes to the silicon nitride surface to form a layer of polymer brushes; dissolving a photoresist in a casting solvent;

coating the solution of the photoresist onto the layer of polymer brushes; and

bonding the photoresist to the layer of polymer brushes.

2. The method of claim 1 , wherein the polymer brushes comprise a polymer with the chemical formula:

HX-(LA)M-(LB)n-Y

wherein the first constituent unit comprises m units of the LA structural unit containing an acidic functional group A and there are n units of the LB structural unit containing functional group B comprising an alkyl, phenyl, or alkyl ester group;

the -X- group of the -XH group bonds onto the silicon nitride, and

Y promotes miscibility and bonding with the photoresist.

3. The method of claim 2 wherein X is oxygen, and Y is hydrogen.

4. The method of claim 2 or claim 3 wherein -(LA)m- is -(ChfcCHCOOHV or -(CH2CHC6H4OH)m- .

5. The method of any one of claims 2 to 4 wherein -(LB)N- is -(CH2CCH3COOCH3)n- or -(CH2CHC6H5)n- .

6. The method of any preceding claim wherein the polymer brushes are random copolymers or block copolymers.

7. The method of any one of claims 1 to 6 wherein the -(LA) and -(LB)- structural units are arranged in a repeating sequence.

8. The method of any one of claims 1 to 7 wherein the molecular weight of each polymer brush is in the range 3000 to 15000 Daltons.

9. The method of claim 2 or claim 3 wherein n is zero and the polymer brush is a homopolymer.

10. The method of any preceding claim wherein the photoresist is for EUV lithography.

11. A photoresist system comprising:

silicon nitride deposited as a layer on a wafer; and

a layer comprising a plurality of polymer brushes bonded to the silicon nitride layer, wherein each of the plurality of polymer brushes contains a first constituent unit and a second constituent unit, and

a photoresist bonded to the layer of polymer brushes.

12. The photoresist system of claim 11 , wherein the polymer brushes comprise a polymer with the chemical formula:

HX-(LA)M-(LB)n-Y

wherein the first constituent unit comprises m units of the LA structural unit containing an acidic functional group A and there are n units of the LB structural unit containing functional group B comprising an alkyl, phenyl, or alkyl ester group;

the -X- group of the -XH group bonds onto the silicon nitride, and

Y promotes miscibility and bonding with the photoresist.

13. The photoresist system of claim 12 wherein X is oxygen, and Y is hydrogen.

14. The photoresist system of claim 12 or claim 13 wherein -(LAV is -(CH2CHCOOH)M- or -(CH2CHC6H OH)m- .

15. The photoresist system of any one of claims 12 to 14 wherein -(Ls)n- is -(CH2CCH3COOCH3)n- or -(CH2CHC6H5)n- .

16. The photoresist system of any one of claims 11 to 15 preceding claim wherein the polymer brushes are random copolymers or block copolymers.

17. The photoresist system of any one of claims 11 to 16 wherein the -(LA) and -(LB)- structural units are arranged in a repeating sequence.

18. The photoresist system of any one of claims 11 to 17 wherein the molecular weight of each polymer brush is in the range 3000 to 15000 Daltons.

19. The photoresist system method of claim 12 or claim 13 wherein n is zero and the polymer brush is a homopolymer.

20. The photoresist system of any one of claims 11 to 19 wherein the photoresist is for EUV lithography.

21. The photoresist system of any one of claims 11 to 20 wherein the polymer brushes trap amines diffusing from the surface of the silicon nitride into the photoresist layer.

22. The photoresist system of claim 21 wherein the polymer brushes neutralize amines diffusing from the surface of the silicon nitride into the photoresist layer.

23. The photoresist system of claim 21 or claim 22 wherein the polymer brushes sterically hinder amines diffusing from the surface of the silicon nitride into the photoresist layer.

24. The photoresist system of claim 11 , wherein the polymer brushes comprise:

a 2-3 nm stack with one or more neutralizing functional groups; and

a 2-3 nm stack with one or more sterically hindering functional groups.

25. The photoresist system of claim 12 wherein n is zero or an integer, and n + m is in the range 40 to 200.