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1. (WO2018223622) CONTROL CIRCUIT, BIAS CIRCUIT, AND CONTROL METHOD
국제사무국에 기록된 최신 서지정보    정보 제출

공개번호: WO/2018/223622 국제출원번호: PCT/CN2017/112179
공개일: 13.12.2018 국제출원일: 21.11.2017
IPC:
H03F 3/21 (2006.01)
H SECTION H — 전기
03
기본전자회로
F
증폭기
3
증폭소자로써 전자관만 또는 반도체장치만이 있는 증폭기
20
전력증폭기, 예. B급증폭기, C급증폭기
21
반도체 장치만이 있는 것
출원인:
尚睿微电子(上海)有限公司 SMARTER MICROELECTRONICS (SHANGHAI) CO., LTD [CN/CN]; 中国上海市 浦东新区碧波路500号203室 RM203, 500 Bibo Road, Pudong District Shanghai 201203, CN
발명자:
马军 MA, Jun; CN
苏强 SU, Qiang; CN
奕江涛 YI, Jiangtao; CN
李阳 LI, Yang; CN
대리인:
北京派特恩知识产权代理有限公司 CHINA PAT INTELLECTUAL PROPERTY OFFICE; 中国北京市 海淀区海淀南路21号中关村知识产权大厦B座2层 2nd Floor, Zhongguancun Intellectual Property Building Block B, No. 21 Haidian South Road, Haidian District Beijing 100080, CN
우선권 정보:
201710427073.208.06.2017CN
발명의 명칭: (EN) CONTROL CIRCUIT, BIAS CIRCUIT, AND CONTROL METHOD
(FR) CIRCUIT DE COMMANDE, CIRCUIT DE POLARISATION ET PROCÉDÉ DE COMMANDE
(ZH) 一种控制电路、偏置电路及控制方法
요약서:
(EN) Provided are a control circuit (45), a bias circuit, and a control method, wherein the control circuit is applied to the bias circuit. The bias circuit comprises a first transistor (41) and a second transistor (42). A gate of the first transistor (41) is connected to a gate of the second transistor (42). The first transistor (41) and the second transistor (42) are configured to amplify an input reference DC current of the bias circuit to obtain a bias DC current. The control circuit comprises: a detection circuit, configured to compare a first DC voltage with a second DC voltage to obtain a comparison result; the first DC voltage being a drain DC voltage of the first transistor (41); and the second DC voltage being a drain DC voltage of the second transistor (42); and a regulation circuit, configured to regulate the first DC voltage and the second DC voltage using the comparison result, such that the drain DC voltage of the first transistor (41) operating in the bias circuit is the same as that of the second transistor (42) operating in the bias circuit.
(FR) L'invention concerne un circuit de commande (45), un circuit de polarisation et un procédé de commande, le circuit de commande étant appliqué au circuit de polarisation. Le circuit de polarisation comprend un premier transistor (41) et un second transistor (42). Une grille du premier transistor (41) est connectée à une grille du second transistor (42). Le premier transistor (41) et le second transistor (42) sont configurés pour amplifier un courant continu de référence d'entrée du circuit de polarisation afin d'obtenir un courant continu de polarisation. Le circuit de commande comprend : un circuit de détection, configuré pour comparer une première tension continue à une seconde tension continue afin d'obtenir un résultat de comparaison; la première tension continue étant une tension continue de drain du premier transistor (41); et la seconde tension continue étant une tension continue de drain du second transistor (42); et un circuit de régulation, configuré pour réguler la première tension continue et la seconde tension continue à l'aide du résultat de comparaison, de sorte que la tension continue de drain du premier transistor (41) fonctionnant dans le circuit de polarisation est la même que celle du second transistor (42) fonctionnant dans le circuit de polarisation.
(ZH) 一种控制电路(45)、偏置电路及控制方法。其中,该控制电路应用于偏置电路,所述偏置电路包括:第一晶体管(41)及第二晶体管(42);所述第一晶体管(41)的栅极与第二晶体管(42)的栅极连接;所述第一晶体管(41)及第二晶体管(42)配置为将所述偏置电路的输入参考直流电流进行放大得到偏置直流电流;所述控制电路包括:检测电路,配置为将第一直流电压与第二直流电压进行比较,得到比较结果;所述第一直流电压为第一晶体管(41)的漏端直流电压;所述第二直流电压为第二晶体管(42)的漏端直流电压;调整电路,配置为利用比较结果调整所述第一直流电压及第二直流电压,使得偏置电路工作中第一晶体管(41)的漏端直流电压与第二晶体管(42)的漏端直流电压相同。
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유라시아 특허청 (AM, AZ, BY, KG, KZ, RU, TJ, TM)
유럽 특허청(EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
공개언어: 중국어 (ZH)
출원언어: 중국어 (ZH)