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1. (WO2018125246) LARGE SCALE INTEGRATION OF HAPTIC DEVICES
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What is claimed is:

1. A method comprising:

forming a first elastomer layer of a large scale integration (LSI) device on a substrate according to a specified manufacturing process, the first elastomer layer having at least a plurality of fluid based circuits, the first elastomer layer adhering to a plurality of formation specifications;

curing the first elastomer layer; and

forming one or more additional elastomer layers of the LSI device with the first elastomer layer according to the specified manufacturing process, the one or more additional elastomer layers having at least a plurality of fluid based circuits, the one or more additional elastomer layers adhering to the plurality of formation specifications.

2. The method of claim 1, wherein the formation specifications include a maximum operating pressure and minimum operating pressure, and wherein the plurality of fluid based circuits include a high pressure rail at the maximum operating pressure, and a low pressure rail at the minimum operating pressure.

3. The method of claim 2, wherein the maximum operating pressure is 3 bars, and the minimum operating pressure is a vacuum.

4. The method of claim 1, wherein the formation specifications include a range of operating voltages, and wherein the layers of the large scale integration device include electronic circuits operating at voltages within the range of operating voltages.

5. The method of claim 1, wherein the formation specifications include minimum layer thickness, and wherein the layers of the LSI device have at least the minimum layer thickness.

6. The method of claim 1, wherein the formation specifications include a minimum hardness level and a maximum hardness level, and wherein the layers of the LSI device comprise materials having hardness levels within the minimum hardness level and the maximum hardness level.

7. The method of claim 6, wherein the minimum hardness level is 10 durometer and the maximum hardness level is 50 durometer.

8. The method of claim 1, wherein the formation specifications include a minimum elongation to tear value, and wherein the layers of the LSI device comprise materials that do not tear below the minimum elongation to tear value.

9. The method of claim 1, wherein the formation specifications include a maximum cure temperature, and the layers of the LSI device comprise materials that cure below the maximum cure temperature.

10. The method of claim 1, wherein the formation specifications indicate a minimum percentage structural integrity after exposure of a minimum time to a curing electromagnetic (EM) radiation of a set frequency range and intensity range.

11. The method of claim 1 , wherein the formation specifications indicate a maximum end to end propagation delay, the end to end propagation delay specifying the maximum time of propagation of a signal from one boundary of the LSI device to an opposing boundary of the LSI device.

12. The method of claim 11, wherein one or more the layers of the LSI device include fluidic gain circuits such that signal propagation delay remains below the maximum end to end propagation delay.

13. The method of claim 1, wherein the formation specifications indicate maximum heat flux per dermal contact area, the heat flux per dermal contact area indicating a maximum thermal radiation conducted to the skin of a user of a wearable device that includes the LSI device, the LSI device radiating heat below the maximum heat flux per dermal contact area on a surface of the LSI device adjacent to the skin of the user.

14. The method of claim 13, wherein the heat flux per dermal contact area is 40 milliwatts per centimeter squared of epidermis.

15. The method of claim 1, wherein the specified manufacturing process uses roll to roll processing.

16. A device comprising:

a first layer being a polymer substrate;

a sensing layer disposed on a surface of the polymer substrate, the sensing layer being an elastomer having channels for the operation of fluid-based sensing and routing circuits;

a first via layer disposed on a surface of the sensing layer, the first via layer being an elastomer having channels for the operation of fluid-based

interconnects that are fluidically coupled to one or more fluid-based circuits of the sensing layer;

a gate layer disposed on a surface of the first via layer, the gate layer being an elastomer having channels for the operation of fluid-based gate and routing

circuits that are fluidically coupled to one or more fluid-based circuits of the first via layer;

a second via layer disposed on a surface of the gate layer, the second via layer being an elastomer having channels for the operation of fluid-based interconnects that are fluidically coupled to one or more fluid-based circuits of the gate layer;

a source and drain layer disposed on a surface of the second via layer, the source and drain layer being an elastomer having channels for the operation of fluid-based source and drain circuits that are fluidically coupled to one or more fluid-based circuits of the second via layer;

a third via layer disposed on a surface of the gate layer, the third via layer being an elastomer having channels for the operation of fluid-based interconnects that are fluidically coupled to one or more fluid-based circuits of the source and drain layer; and

an actuator layer disposed on a surface of the gate layer, the actuator layer being an elastomer having channels for the operation of fluid-based actuators that are fluidically coupled to one or more fluid-based circuits of the third via layer.

17. The device of claim 16, wherein the sensing layer further includes stretch-sensitive doped polymer sensors, coupled via an electrical-fluidic junction with the fluid-based routing circuits.

18. A device comprising:

a first layer being a substrate; and

one or more additional layers formed above a top surface of the polymer substrate, the one or more additional layers being elastomers and having channels for the operation of a fluid-based actuator, a fluid-based source, drain, and gate circuit, and a fluid-based sensing circuit.

19. The device of claim 18, wherein the substrate is comprised of a material that is at least one of: cloth, doped polymer, un-doped polymer, long-chain molecules, and proteins.

20. The device of claim 18, wherein at least two of the one or more of the additional layers are formed on a same physical layer.

21. A method comprising:

forming a first elastomer layer of a large scale integration (LSI) device on a

substrate according to a specified manufacturing process, the first

elastomer layer having at least a plurality of fluid based circuits, the first elastomer layer adhering to a plurality of formation specifications;

curing the first elastomer layer; and

forming one or more additional elastomer layers of the LSI device with the first elastomer layer according to the specified manufacturing process, the one or more additional elastomer layers having at least a plurality of fluid based circuits, the one or more additional elastomer layers adhering to the plurality of formation specifications.

22. The method of claim 21, wherein the formation specifications include a maximum operating pressure and minimum operating pressure, and wherein the plurality of fluid based circuits include a high pressure rail at the maximum operating pressure, and a low pressure rail at the minimum operating pressure, wherein the maximum operating pressure optionally is 3 bars, and wherein the minimum operating pressure optionally is a vacuum.

23. The method of claim 21 or 22, wherein the formation specifications include a range of operating voltages, wherein the layers of the large scale integration device include electronic circuits operating at voltages within the range of operating voltages.

24. The method of any claims 21 to 23, wherein the formation specifications include a minimum layer thickness, wherein the layers of the LSI device have at least the minimum layer thickness.

25. The method of any claims 21 to 24, wherein the formation specifications include a minimum hardness level and a maximum hardness level, wherein the layers of the LSI device comprise materials having hardness levels within the minimum hardness level and the maximum hardness level, wherein the minimum hardness level optionally is 10 durometer, and the maximum hardness level optionally is 50 durometer.

26. The method of any of claims 21 to 25, wherein the formation specifications include a minimum elongation to tear value, and wherein the layers of the LSI device comprise materials that do not tear below the minimum elongation to tear value.

27. The method of any of claims 21 to 26, wherein the formation specifications include a maximum cure temperature, and the layers of the LSI device comprise materials that cure below the maximum cure temperature.

28. The method of any of claims 21 to 27, wherein the formation specifications indicate a minimum percentage structural integrity after exposure of a minimum time to a curing electromagnetic (EM) radiation of a set frequency range and intensity range.

29. The method of any of claims 21 to 28, wherein the formation specifications indicate a maximum end to end propagation delay, the end to end propagation delay specifying the maximum time of propagation of a signal from one boundary of the LSI device to an opposing boundary of the LSI device, wherein one or more the layers of the LSI device optionally include fluidic gain circuits such that signal propagation delay remains below the maximum end to end propagation delay.

30. The method of any of claims 21 to 29, wherein the formation specifications indicate maximum heat flux per dermal contact area, the heat flux per dermal contact area indicating a maximum thermal radiation conducted to the skin of a user of a wearable device that includes the LSI device, the LSI device radiating heat below the maximum heat flux per dermal contact area on a surface of the LSI device adjacent to the skin of the user, wherein the heat flux per dermal contact area optionally is 40 milliwatts per centimeter squared of epidermis.

31. The method of any of claims 21 to 30, wherein the specified manufacturing process uses roll to roll processing.

32. A device comprising:

a first layer being a polymer substrate; and

one or more additional layers formed above a top surface of the polymer substrate, the one or more additional layers being elastomers and having channels for the operation of a fluid-based actuator, a fluid-based source, drain, and gate circuit, and a fluid-based sensing circuit, wherein at least two of the one or more of the additional layers are optionally formed on a same physical layer.

33. The device of claim 32 comprising:

a sensing layer disposed on a surface of the polymer substrate, the sensing layer being an elastomer having channels for the operation of fluid-based sensing and routing circuits;

a first via layer disposed on a surface of the sensing layer, the first via layer being an elastomer having channels for the operation of fluid-based

interconnects that are fluidically coupled to one or more fluid-based circuits of the sensing layer;

a gate layer disposed on a surface of the first via layer, the gate layer being an elastomer having channels for the operation of fluid-based gate and routing

circuits that are fluidically coupled to one or more fluid-based circuits of the first via layer;

a second via layer disposed on a surface of the gate layer, the second via layer being an elastomer having channels for the operation of fluid-based interconnects that are fluidically coupled to one or more fluid-based circuits of the gate layer;

a source and drain layer disposed on a surface of the second via layer, the source and drain layer being an elastomer having channels for the operation of fluid-based source and drain circuits that are fluidically coupled to one or more fluid-based circuits of the second via layer;

a third via layer disposed on a surface of the gate layer, the third via layer being an elastomer having channels for the operation of fluid-based interconnects that are fluidically coupled to one or more fluid-based circuits of the source and drain layer; and

an actuator layer disposed on a surface of the gate layer, the actuator layer being an elastomer having channels for the operation of fluid-based actuators that are fluidically coupled to one or more fluid-based circuits of the third via layer.

34. The device of claim 33, wherein the sensing layer further includes stretch-sensitive doped polymer sensors, coupled via an electrical-fluidic junction with the fluid-based routing circuits.

35. The device of any of claims 32 to 34, wherein the substrate is comprised of a material that is at least one of: cloth, doped polymer, un-doped polymer, long-chain molecules, and proteins.