국제 및 국내 특허문헌 검색

1. (WO2018116655) MAGNETORESISTANCE EFFECT DEVICE

Pub. No.:    WO/2018/116655    International Application No.:    PCT/JP2017/039665
Publication Date: Fri Jun 29 01:59:59 CEST 2018 International Filing Date: Fri Nov 03 00:59:59 CET 2017
IPC: H01L 29/82
G11B 5/39
H01L 43/08
H03B 15/00
Applicants: TDK CORPORATION
TDK株式会社
Inventors: URABE Junichiro
占部 順一郎
SHIBATA Tetsuya
柴田 哲也
YAMANE Takekazu
山根 健量
SUZUKI Tsuyoshi
鈴木 健司
SHIMURA Atsushi
志村 淳
Title: MAGNETORESISTANCE EFFECT DEVICE
Abstract:
A magnetoresistance effect device 100 is characterized by being provided with first magnetoresistance effect elements 101a, 101b, a second magnetoresistance effect element 101c, a first port 109a, a second port 109b, a signal line 107, and a DC application terminal 110, wherein: the first port 109a and the second port 109b are connected via the signal line 107; the first magnetoresistance effect elements 101a, 101b, and the second magnetoresistance effect element 101c are connected to the signal line 107 in parallel with respect to the second port 109b; the first magnetoresistance effect element 101a (101b) and the second magnetoresistance effect element 101c are formed such that the first magnetoresistance effect element 101a (101b) and the second magnetoresistance effect element 101c have inverse relations between directions of a DC current, which is inputted from the DC application terminal 110 and flows in the first magnetoresistance effect element 101a (101b) and also flows in the second magnetoresistance effect element 101c, and the respective arrangement orders of a magnetization fixed layer 102, a spacer layer 103, and a magnetization free layer 104; and the spin torque resonance frequency of the first magnetoresistance effect element 101a (101b) and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other.