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1. (WO2018055704) SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2018/055704    International Application No.:    PCT/JP2016/077889
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Thu Sep 22 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 29/788
H01L 29/792
Applicants: TOSHIBA MEMORY CORPORATION
東芝メモリ株式会社
Inventors: SAKAMOTO, Wataru
坂本 渉
NAKAKI, Hiroshi
中木 寛
ISHIHARA, Hanae
石原 英恵
Title: SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Abstract:
The semiconductor device according to an embodiment includes a laminate, a first insulating layer, first and second step parts 2, and a second insulating layer 46. The laminate includes a first electrode layer 41 (WLDD) and a second electrode layer 41 (SGD). The first and second step parts 2 are provided to a first end-section region 101 and a second end-section region 102. The second insulating layer 46 extends in the X-direction. The second insulating layer divides the second electrode layer 41 (SGD) along the X-direction. The length L1 of the second insulating layer 46 along the X-direction is greater than the length L2 of the second electrode layer 41 (SGD) along the X-direction and less than the length L3 of the first electrode layer 41 (WLDD) along the X-direction.