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1. (WO2017210534) HETERO-STRUCTURE-BASED INTEGRATED PHOTONIC DEVICES, METHODS AND APPLICATIONS
국제사무국에 기록된 최신 서지정보정보 제출

공개번호: WO/2017/210534 국제출원번호: PCT/US2017/035646
공개일: 07.12.2017 국제출원일: 02.06.2017
IPC:
H01S 5/02 (2006.01) ,H01S 5/22 (2006.01)
H SECTION H — 전기
01
기본적 전기소자
S
유도방출을 이용한 장치
5
반도체 레이저
02
레이저 동작에 필수적이지 않은 구조적인 세부 또는 부품
H SECTION H — 전기
01
기본적 전기소자
S
유도방출을 이용한 장치
5
반도체 레이저
20
광파를 가이드하는 반도체 본체의 구조 또는 형상
22
리지(ridge) 또는 스트라이프(stripe)구조를 갖는 것
출원인:
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. [US/US]; 12201 Research Parkway, Suite 501 Orlando, FL 32826, US
발명자:
FATHPOUR, Sasan; US
CHILES, Jeffrey; US
대리인:
NOTO, Joseph, M.; US
GREENER, William; US
NOCILLY, David, L.; US
MCGUIRE, George, R.; US
PRICE, Frederick, Jm; US
우선권 정보:
62/345,39303.06.2016US
발명의 명칭: (EN) HETERO-STRUCTURE-BASED INTEGRATED PHOTONIC DEVICES, METHODS AND APPLICATIONS
(FR) DISPOSITIFS PHOTONIQUES INTÉGRÉS BASÉS SUR UNE HÉTÉROSTRUCTURE, PROCÉDÉS ET APPLICATIONS
요약서:
(EN) An integrated photonic structure and a method of fabrication are provided which includes: a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the underlying substrate by the at least one opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane, wherein the first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.
(FR) L'invention concerne une structure photonique intégrée et un procédé de fabrication comprenant : un substrat présentant au moins une ouverture ménagée en son sein ; un empilement de semi-conducteurs ménagé au-dessus du substrat, l'empilement de semi-conducteurs étant, au moins en partie, isolé du substrat sous-jacent par ladite ouverture de façon à délimiter une membrane semi-conductrice suspendue ; et des première et seconde régions dopées situées à l'intérieur de la membrane semi-conductrice suspendue, la première région dopée étant séparée latéralement de la seconde région dopée par une région optiquement active ménagée en son sein qui délimite une région de guide d'ondes de la structure photonique intégrée.
front page image
지정국: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
아프리카지역 지식재산권기구(ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
유라시아 특허청(EAPO) (AM, AZ, BY, KG, KZ, RU, TJ, TM)
유럽 특허청(EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
아프리카 지식재산권기구(OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
공개언어: 영어 (EN)
출원언어: 영어 (EN)
또한로 출판 됨:
CN109478764