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1. (WO2017000637) METHOD OF PROGRAMMING FLASH MEMORY, AND SINGLE BOARD, HOST COMPUTER AND SYSTEM UTILIZING SAME
국제사무국에 기록된 최신 서지정보

공개번호: WO/2017/000637 국제출원번호: PCT/CN2016/079907
공개일: 05.01.2017 국제출원일: 21.04.2016
IPC:
G06F 9/445 (2006.01)
G SECTION G — 물리학
06
산술논리연산; 계산; 계수
F
전기에 의한 디지털 데이터처리
9
프로그램제어를 위한 장치, 예. 제어장치
06
프로그램 기억방식을 사용하는 것, 즉 프로그램을 수신하고 보지하는 처리장치의 내부기억장치를 사용하는 것
44
특정한 프로그램을 실행하기 위한 배치
445
프로그램 로딩 또는 개시
출원인:
深圳市中兴微电子技术有限公司 SANECHIPS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 南山区西丽街道留仙大道中兴工业园 ZTE Industrial Park, Liuxian Avenue, Xili Street, Nanshan District Shenzhen, Guangdong 518055, CN
발명자:
林坤 LIN, Kun; CN
대리인:
北京派特恩知识产权代理有限公司 CHINA PAT INTELLECTUAL PROPERTY OFFICE; 中国北京市 海淀区海淀南路21号中关村知识产权大厦B座2层 2nd Floor Zhongguancun Intellectual Property Building Block B, No. 21 Haidian South Road, Haidian Beijing 100080, CN
우선권 정보:
201510375705.630.06.2015CN
발명의 명칭: (EN) METHOD OF PROGRAMMING FLASH MEMORY, AND SINGLE BOARD, HOST COMPUTER AND SYSTEM UTILIZING SAME
(FR) PROCÉDÉ DE PROGRAMMATION DE MÉMOIRE FLASH, ET CARTE UNIQUE, ORDINATEUR HÔTE ET SYSTÈME L'UTILISANT
(ZH) 一种闪存烧写方法、单板、上位机及系统
요약서:
(EN) A programmable flash memory single board, host computer, system, and programming method. The method comprises: after creating a download thread of a serial port of each of programmable flash memory single boards, executing the download thread of the serial port of each of the programmable flash memory single boards (110); executing, according to an execution result of the download thread of serial port of each of the programmable flash memory single boards, a second file, and reading, according to an execution result of the second file, a first mirror file in each of universal serial bus (USB) flash drives (630), wherein the first mirror file includes a microkernel comprising a root file system (120); partitioning and formatting, according to an execution result of the microkernel and the root file system, flash memory (420) on each of the programmable flash memory single boards, and programming a second mirror file in each of the USB flash drives (630) into the flash memory (420) on each of the programmable flash memory single boards (130).
(FR) L'invention concerne une carte unique, un ordinateur hôte, un système et un procédé de programmation de mémoire flash programmable. Le procédé consiste : après création d'un fil d'exécution de téléchargement d'un port série de chacune de cartes uniques de mémoire flash programmable, à exécuter le fil d'exécution de téléchargement du port série de chacune des cartes uniques de mémoire flash programmable (110); à exécuter, selon un résultat d'exécution du fil d'exécution de téléchargement d'un port série de chacune des cartes uniques de mémoire flash programmable, un second fichier, et lire, selon un résultat d'exécution du second fichier, un premier fichier miroir dans chacune des clés de bus série universel (USB) (630), le premier fichier miroir comprenant un micronoyau comprenant un système de fichier racine (120); à partitionner et formater, selon un résultat d'exécution du micronoyau et le système de fichier racine, une mémoire flash (420) sur chacune des cartes uniques de mémoire flash programmable, et à programmer un second fichier miroir dans chacune des clés USB (630) dans la mémoire flash (420) sur chacune des cartes uniques de mémoire flash programmable (130).
(ZH) 一种闪存(Flash)烧写单板、上位机、系统及烧写方法,该方法包括:创建每个Flash烧写单板串口的下载线程后,运行每个Flash烧写单板串口的下载线程(110);根据每个Flash烧写单板串口的下载线程的运行结果运行第二文件,根据第二文件的运行结果读取每个通串线USB闪存盘(630)中的第一镜像文件,其中,所述第一镜像文件包括带有根文件系统的微内核(120);根据微内核和根文件系统的运行结果对每个Flash烧写单板Flash(420)进行分区操作和格式化操作,将每个USB闪存盘(630)中的第二镜像文件烧写至每个Flash烧写单板Flash(420)(130)。
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지정국: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
아프리카지역 지식재산권기구(ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
유라시아 특허청(EAPO) (AM, AZ, BY, KG, KZ, RU, TJ, TM)
유럽 특허청(EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
아프리카 지식재산권기구(OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
공개언어: 중국어 (ZH)
출원언어: 중국어 (ZH)