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1. (WO2015111638) METHOD FOR FORMING CONDUCTOR LAYER, AND METHOD FOR PRODUCING MULTILAYER WIRING SUBSTRATE USING METHOD FOR FORMING CONDUCTIVE LAYER
국제사무국에 기록된 최신 서지정보   

공개번호:    WO/2015/111638    국제출원번호:    PCT/JP2015/051581
공개일: 30.07.2015 국제출원일: 21.01.2015
IPC:
H01B 13/00 (2006.01), B32B 15/088 (2006.01), H05K 1/03 (2006.01), H05K 3/38 (2006.01), H05K 3/46 (2006.01)
출원인: UBE INDUSTRIES, LTD. [JP/JP]; 1978-96, Oaza Kogushi, Ube-shi, Yamaguchi 7558633 (JP)
발명자: MIURA, Toru; (JP).
BAMBA, Keita; (JP).
KOHDA, Masafumi; (JP).
YOKOZAWA, Tadahiro; (JP)
대리인: ITO, Katsuhiro; (JP)
우선권 정보:
2014-009121 22.01.2014 JP
2014-009123 22.01.2014 JP
발명의 명칭: (EN) METHOD FOR FORMING CONDUCTOR LAYER, AND METHOD FOR PRODUCING MULTILAYER WIRING SUBSTRATE USING METHOD FOR FORMING CONDUCTIVE LAYER
(FR) PROCÉDÉ DE FORMATION DE COUCHE CONDUCTRICE, ET PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT DE CÂBLAGE MULTICOUCHE AU MOYEN DUDIT PROCÉDÉ DE FORMATION DE COUCHE CONDUCTRICE
(JA) 導体層の形成方法、およびそれを用いた多層配線基板の製造方法
요약서: front page image
(EN) The present invention pertains to a method for forming a conductor layer, wherein, after a polyimide etching process is performed on a surface provided to a polyimide layer (a) of a polyimide film in which the polyimide layer (a) is provided to one or both surfaces of a polyimide layer (b) so as to eliminate at least a portion of the polyimide layer (a), a conductor layer is formed on said surface. The method for forming the conductor layer is characterized in that the polyimide etching process time T (min.) represented using t (min.), which is defined by the illustrated formula, lies within the range 0.2t ≤ T ≤ 5t.
(FR) La présente invention concerne un procédé de formation d'une couche conductrice, consistant, suite à la mise en œuvre d'un traitement de gravure de polyimide sur une surface prévue sur une couche de polyimide (a) d'un film de polyimide dans lequel la couche de polyimide (a) est disposée sur une ou sur les deux surfaces d'une couche de polyimide (b) de sorte à éliminer au moins une partie de la couche de polyimide (a), à former une couche conductrice sur ladite surface. Le procédé de formation de la couche conductrice est caractérisé en ce que le temps T (min) de traitement de gravure de polyimide représenté au moyen de t (min), qui est défini par la formule décrite, s'inscrit dans la plage 0,2t ≤ T ≤ 5t.
(JA) 本発明は、ポリイミド層(b)の片面又は両面にポリイミド層(a)を設けたポリイミドフィルムのポリイミド層(a)を設けた面をポリイミドエッチング処理してポリイミド層(a)の少なくとも一部を除去した後、この面に導体層を形成する導体層の形成方法であって、 下記式で定義されるt(min)を用いて表したポリイミドエッチング処理時間T(min)が、0.2t≦T≦5tの範囲内であることを特徴とする導体層の形成方法に関する。
지정국: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
공개언어: Japanese (JA)
출원언어: Japanese (JA)