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1. (WO2013163433) LASER JOINING DEVICE
국제사무국에 기록된 최신 서지정보   

공개번호: WO/2013/163433 국제출원번호: PCT/US2013/038223
공개일: 31.10.2013 국제출원일: 25.04.2013
IPC:
B23K 26/20 (2006.01)
B SECTION B — 처리조작; 운수
23
공작 기계; 달리 분류되지 않는 금속 가공
K
납땜(Soldering) 또는 비납땜(Unsoldering); 용접; 납땜 또는 용접에 의하여 클래딩(clading) 또는 피복; 국부 가열에 의한 절단, 예. 화염 절단; 레이저 빔에 의한 가공
26
레이저 빔(laser beam)에 의한 가공, 예. 용접, 절단, 보오링(boring)
20
접합, 예. 용접
출원인:
ALERE SAN DIEGO, INC. [US/US]; 9975 Summers Ridge Road Dan Diego, CA 92121, US
발명자:
OLSSON, Erik, Mikael; US
RIVERON, Jonathan; US
TOVAR, Armando, Raul; US
대리인:
TAYLOR, Stacy, L.; Dla Piper Llp (US) 4365 Executive Drive, Suite 1100 San Diego, CA 92121-2133, US
우선권 정보:
61/638,85026.04.2012US
발명의 명칭: (EN) LASER JOINING DEVICE
(FR) DISPOSITIF D'ASSEMBLAGE AU LASER
요약서:
(EN) The present invention relates to methods for joining materials as well as articles manufactured using such processes. The invention pertains to a process for joining a first substrate to a second substrate. The process includes irradiating a portion of a first substrate with a laser beam having a first wavelength and intensity sufficient to increase the absorbance of the first substrate to light having a second, different wavelength. The laser beam may carbonize at least a portion of the irradiated portion of the first substrate imparting a higher absorbance to light than non-irradiated portions of the first substrate. A second substrate is then placed in contact with the irradiated portion of the first substrate. The first substrate is then irradiated with a second laser having a second wavelength, different to the first wavelength; with a sufficient intensity to heat and, preferably melt, the irradiated portion of the first substrate.
(FR) L'invention se rapporte à des procédés d'assemblage de matériaux ainsi qu'à des objets fabriqués à l'aide de ces processus. L'invention a trait à un processus qui permet d'assembler un premier substrat avec un second substrat. Ledit processus consiste à exposer une partie d'un premier substrat à un faisceau laser présentant une première longueur d'onde et une intensité suffisante pour accroître l'absorbance du premier substrat quant à une lumière ayant une seconde longueur d'onde, différente de la première. Le faisceau laser peut carboniser au moins une portion de la partie exposée du premier substrat, ce qui confère à cette partie une absorbance quant à la lumière qui est plus élevée que celle des parties non exposées du premier substrat. Un second substrat est alors mis en contact avec la partie exposée dudit premier substrat. Ensuite, ce premier substrat est exposé à un second laser qui présente une seconde longueur d'onde différente de la première, ainsi qu'une intensité suffisante pour chauffer, et de préférence faire fondre, la partie exposée dudit premier substrat.
front page image
지정국: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
아프리카지역 지식재산권기구(ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
유라시아 특허청 (AM, AZ, BY, KG, KZ, RU, TJ, TM)
유럽 특허청(EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
공개언어: 영어 (EN)
출원언어: 영어 (EN)