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1. (WO2003086706) POLISHING METHOD
국제사무국에 기록된 최신 서지정보   

공개번호:    WO/2003/086706    국제출원번호:    PCT/JP2003/004894
공개일: 23.10.2003 국제출원일: 17.04.2003
IPC:
B24B 37/005 (2012.01), B24B 37/30 (2012.01), H01L 21/304 (2006.01), H01L 21/306 (2006.01)
출원인: EBARA CORPORATION [JP/JP]; 11-1, Haneda Asahi-cho Ohta-ku, Tokyo 144-8510 (JP) (For All Designated States Except US).
TOGAWA, Tetsuji [JP/JP]; (JP) (For US Only).
FUKUSHIMA, Makoto [JP/JP]; (JP) (For US Only).
SAKURAI, Kunihiko [JP/JP]; (JP) (For US Only).
YOSHIDA, Hiroshi [JP/JP]; (JP) (For US Only).
NABEYA, Osamu [JP/JP]; (JP) (For US Only).
ICHIMURA, Teruhiko [JP/JP]; (JP) (For US Only)
발명자: TOGAWA, Tetsuji; (JP).
FUKUSHIMA, Makoto; (JP).
SAKURAI, Kunihiko; (JP).
YOSHIDA, Hiroshi; (JP).
NABEYA, Osamu; (JP).
ICHIMURA, Teruhiko; (JP)
대리인: WATANABE, Isamu; GOWA Nishi-Shinjuku 4F 5-8, Nishi-Shinjuku 7-chome Shinjuku-ku, Tokyo 160-0023 (JP)
우선권 정보:
2002-116721 18.04.2002 JP
발명의 명칭: (EN) POLISHING METHOD
(FR) PROCEDE DE POLISSAGE
요약서: front page image
(EN)A polishing method where a semiconductor wafer (W) is held by a top ring (23), pressed against a polishing surface (10) and polished. An elastic diaphragm (60) is installed on the lower face of an vertical moving member (62) so as to define a pressure chamber (70) in the top ring (23). A pressurized fluid is supplied to the pressure chamber (70) in order that the semiconductor wafer (W) is pressed against the polishing surface (10) by the fluid pressure of the fluid and polished. The pressurized fluid is jetted from an opening (62a) formed at the center of the vertical moving member (62) in order to separate the polished semiconductor wafer (W) from the top ring (23).
(FR)Cette invention concerne un procédé de polissage dans lequel une tranche de semi-conducteur (W) est maintenue par une bague supérieure (23), plaquée contre une surface de polissage (90) et polie. Une membrane élastique (60) est disposée sur le bord inférieur d'un élément vertical mobile (62), ce qui définit une chambre de pression (70) dans la bague supérieure (23). Un fluide sous pression va alimenter la chambre de pression (70), la tranche de semi-conducteur (W) étant plaquée par la pression du fluide contre la surface de polissage (90) et polie. Le liquide sous pression qui . jaillit d'une ouverture (62a) formée au centre de l'élément vertical mobile (62) sépare la tranche de semi-conducteur polie (W) de la bague supérieure (23).
지정국: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
공개언어: Japanese (JA)
출원언어: Japanese (JA)