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1. (WO2010023937) CRYSTAL MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURED USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

Pub. No.:    WO/2010/023937    International Application No.:    PCT/JP2009/004209
Publication Date: 2010. 3. 4 International Filing Date: 2009. 8. 28
IPC: C30B 29/06
C01B 33/02
C30B 28/06
H01L 21/208
H01L 21/336
H01L 29/786
H01L 31/04
Applicants: HIROSHIMA UNIVERSITY
国立大学法人広島大学
HIGASHI, Seiichiro
東清一郎
KOBA, Naohiro
木庭直浩
Inventors: HIGASHI, Seiichiro
東清一郎
KOBA, Naohiro
木庭直浩
Title: CRYSTAL MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURED USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
Abstract:
Provided is a crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate.  One end of a spring (2) is fixed to a rack (1) and the other end thereof is coupled to a magnetic body (3).  One end of the magnetic body (3) is coupled to the spring and the other end thereof is coupled to a piston (6).  A coil (4) is wound around the magnetic body (3) and electrically connected between a power supply circuit (5) and a ground node (GND).  The piston (6) comprises a straight member (61) inserted into a cylinder (7).  The cylinder (7) has a hollow columnar shape and comprises a small hole (71) in the bottom surface (7B) thereof.  The cylinder (7) holds a silicon melt (13).  A substrate (11) is supported by an XY stage (12) so as to face the small hole (71) of the cylinder (7).  The power supply circuit (5) feeds a pulsed current to the coil (4) to move the piston (6) in a vertical direction (DR1).  As a result, a droplet (14) is ejected from the small hole (71) toward the substrate (11) at an initial speed of 1.02 m/s.