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1. KR1020130088746 - 칩의 제조 방법

官庁 大韓民国
出願番号 1020127031686
出願日 19.07.2011
公開番号 1020130088746
公開日 08.08.2013
特許番号 1019141460000
特許付与日 02.11.2018
公報種別 B1
IPC
H01L 21/301
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
301半導体本体を別個の部品に細分割するため,例.分離する
B23K 26/00
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
B23K 26/04
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
02加工物の位置決めまたは観察,例.照射点に関するもの;レーザービームの軸合せ,照準または焦点合せ
04レーザービームの自動軸合せ,自動照準,または自動焦点合せ,例.後散乱光を用いるもの
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
H01L 21/30625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
H01L 21/4896
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4885Wire-like parts or pins
4896Mechanical treatment, e.g. cutting, bending
H01L 21/203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
203using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
出願人 하마마츠 포토닉스 가부시키가이샤
発明者 시모이 히데키
아라키 게이스케
代理人 특허법인태평양
優先権情報 2010167440 26.07.2010 JP
発明の名称
(KO) 칩의 제조 방법
要約
(KO)
기판 상에 기능 소자가 형성되어 이루어지는 칩을 제조하기 위한 제조 방법으로서, 실리콘으로 형성된 판상(板狀)의 가공 대상물의 일주면(一主面)에 기능 소자를 형성하는 기능 소자 형성 공정과, 가공 대상물에 레이저광을 집광(集光)시키는 것에 의해, 가공 대상물에서의 일주면으로부터 기판의 두께에 대응하는 소정 깊이의 위치에, 제1 개질 영역을 일주면을 따라서 형성하는 제1 개질 영역 형성 공정과, 가공 대상물에 레이저광을 집광시키는 것에 의해, 가공 대상물에서의 일주면측에, 일주면으로부터 볼 때 기판의 측(側) 가장자리에 대응하여 연장하는 제2 개질 영역을, 가공 대상물의 두께 방향을 따라서 제1 개질 영역에 연결되도록 형성하는 제2 개질 영역 형성 공정과, 제1 및 제2 개질 영역 형성 공정 후, 제1 및 제2 개질 영역을 따라서 에칭을 선택적으로 진전시키는 것에 의해, 가공 대상물의 일부를 절취하여 기판을 형성하는 에칭 공정을 포함하고 있다.