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1. JP2012028646 - チップの製造方法

官庁 日本
出願番号 2010167440
出願日 26.07.2010
公開番号 2012028646
公開日 09.02.2012
特許番号 5653110
特許付与日 28.11.2014
公報種別 B2
IPC
H01L 21/301
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
301半導体本体を別個の部品に細分割するため,例.分離する
B23K 26/00
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
B23K 26/046
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
02加工物の位置決めまたは観察,例.照射点に関するもの;レーザービームの軸合せ,照準または焦点合せ
04レーザービームの自動軸合せ,自動照準,または自動焦点合せ,例.後散乱光を用いるもの
046レーザービームの自動焦点合せ
B23K 26/382
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
36材料の除去
38穴あけまたは切断
382穴あけ
CPC
H01L 21/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
H01L 21/7806
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
7806involving the separation of the active layers from a substrate
B23K 26/04
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
H01L 21/203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
203using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/30625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
出願人 浜松ホトニクス株式会社
発明者 下井 英樹
荒木 佳祐
代理人 長谷川 芳樹
黒木 義樹
石田 悟
荒井 寿王
発明の名称
(EN) CHIP MANUFACTURING METHOD
(JA) チップの製造方法
要約
(EN)

PROBLEM TO BE SOLVED: To easily manufacture a chip with desired thickness.

SOLUTION: In a method for manufacturing a chip obtained by forming a function element 15 on a substrate, laser lights L are first focused on a workpiece 1, so as to form a reformed area 7a along a surface 3 at a predetermined depth position corresponding to a substrate thickness H from the surface 3 of the workpiece 1. A reformed area 7b extending corresponding to a side edge of the substrate 11 seen from the surface 3 is formed on the surface 3 of a workpiece 1 to connect to the reformed area 7a along a Z-direction. Then, after the function element 15 is formed on the surface 3 of the workpiece 1, etching is selectively extended along the reformed areas 7a, 7b, so as to cut one part of the workpiece 1 as a substrate of the chip. Thereby, without making the workpiece thin by grinding, the chip having a desired thickness is formed, so as to facilitate handling of the workpiece 1.

COPYRIGHT: (C)2012,JPO&INPIT

(JA)

【課題】所望厚さのチップを容易に製造する。
【解決手段】基板上に機能素子15が形成されて成るチップを製造するための製造方法であって、まず、加工対象物1にレーザ光Lを集光させることにより、加工対象物1における表面3から基板厚さHに対応する所定深さの位置に改質領域7aを表面3に沿って形成すると共に、加工対象物1の表面3側に、表面3から見て基板11の側縁に対応して延在する改質領域7bをZ方向に沿って改質領域7aに繋がるよう形成する。続いて、加工対象物1の表面3に機能素子15を形成した後、改質領域7a,7bに沿ってエッチングを選択的に進展させることにより、加工対象物1の一部をチップの基板として切り取る。これにより、研磨で加工対象物1を薄化することなく、所望厚さを有するチップが形成されることとなり、加工対象物1のハンドリングが容易にされる。
【選択図】図7