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1. CN207216226 - Display device

官庁 中華人民共和国
出願番号 201721108100.1
出願日 31.08.2017
公開番号 207216226
公開日 10.04.2018
公報種別 U
IPC
G02F 1/1362
G物理学
02光学
F光の強度,色,位相,偏光または方向の制御,例.スイッチング,ゲーテイング,変調または復調のための装置または配置の媒体の光学的性質の変化により,光学的作用が変化する装置または配置;そのための技法または手順;周波数変換;非線形光学;光学的論理素子;光学的アナログ/デジタル変換器
1独立の光源から到達する光の強度,色,位相,偏光または方向の制御のための装置または配置,例.スィッチング,ゲーテイングまたは変調;非線形光学
01強度,位相,偏光または色の制御のためのもの
13液晶に基づいたもの,例.単一の液晶表示セル
133構造配置;液晶セルの作動;回路配置
136半導体の層または基板と構造上組み合された液晶セル,例.集積回路の一部を構成するセル
1362アクティブマトリックスセル
H01L 27/12
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
02整流,発振,増幅またはスイッチングに特に適用される半導体構成部品を含むものであり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁を有する集積化された受動回路素子を含むもの
12基板が半導体本体以外のもの,例.絶縁体本体
H01L 27/32
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
28能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる構成部品を含むもの
32光放出に特に適用される構成部品を有するもの,例.有機発光ダイオードを使用したフラットパネル・ディスプレイ
CPC
G09G 3/3225
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix ; no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
22using controlled light sources
30using electroluminescent panels
32semiconductive, e.g. using light-emitting diodes [LED]
3208organic, e.g. using organic light-emitting diodes [OLED]
3225using an active matrix
G09G 3/3648
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix ; no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
34by control of light from an independent source
36using liquid crystals
3611Control of matrices with row and column drivers
3648using an active matrix
G09G 2300/0426
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
2300Aspects of the constitution of display devices
04Structural and physical details of display devices
0421Structural details of the set of electrodes
0426Layout of electrodes and connections
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
出願人 JAPAN DISPLAY INC.
株式会社日本显示器
発明者 AKIHIRO HANADA
花田明纮
代理人 北京市金杜律师事务所 11256
北京市金杜律师事务所 11256
優先権情報 2016184101 21.09.2016 JP
発明の名称
(EN) Display device
(ZH) 显示装置
要約
(EN)
The utility model relates to a display device. The utility model discloses a problem is forming LTPSTFT and oxide semiconductor TFT in same base plate. The solution means are a display device, and itstangible becomes to have the display area of pixel, the pixel contains the 1TFT who uses oxide semiconductor (107) form gate insulating film (108) on oxide semiconductor (107) form the 1st gate electrode (109) on gate insulating film (108) the source electrode of oxide semiconductor (107) and drain electrode separately in, with thereby the oxide semiconductor contact forms the 1st source -drain electrode (110) that are formed by metal or alloy, the 1st gate electrode (109) reach the 1st source -drain electrode (110) are the same material.

(ZH)
本实用新型涉及显示装置。本实用新型的课题为能够在同一基板内形成LTPSTFT和氧化物半导体TFT。解决手段为一种显示装置,其具有形成有像素的显示区域,所述像素包含使用氧化物半导体(107)的第1TFT,在所述氧化物半导体(107)之上形成栅极绝缘膜(108),在所述栅极绝缘膜(108)之上形成第1栅电极(109),在所述氧化物半导体(107)的源极及漏极的各自中,与所述氧化物半导体接触从而形成由金属或合金形成的第1源漏电极(110),所述第1栅电极(109)及所述第1源漏电极(110)为相同材料。

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