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1. CN1540776 - Method of mfg. organic transistor and organic transistor

官庁
中華人民共和国
出願番号 200410035077.9
出願日 23.04.2004
公開番号 1540776
公開日 27.10.2004
公報種別 A
IPC
H01L 51/20
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
20Devices
H01L 51/40
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
05整流,増幅,発振またはスイッチングに特に適用されるものであり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁を有するコンデンサーまたは抵抗器
40このような装置またはその部品の製造または処理に特に適用される方法または装置
CPC
H01L 51/0545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
H01L 51/001
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
001Vacuum deposition
H01L 51/0052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
出願人 Nippon Pioneer Corp.
日本先锋公司
発明者 Ota Satoru
大田悟
代理人 jia jinghuan song li
北京市柳沈律师事务所
北京市柳沈律师事务所
優先権情報 2003122623 25.04.2003 JP
発明の名称
(EN) Method of mfg. organic transistor and organic transistor
(ZH) 制造有机晶体管的方法及有机晶体管
要約
(EN)
A process for the production of an organic transistor comprises a step of forming a surface-treated layer on a gate insulating layer and a step of forming an organic semiconductor layer on the surface-treated layer. In the process, a step of irradiating the gate insulating layer with ultraviolet rays in an ozone atmosphere before the formation of the surface-treated layer is involved.

(ZH)

一种制造有机晶体管的方法包括在栅绝缘层上形成表面处理层的步骤和在表面处理层上形成有机半导体层的步骤。在该方法中,包括在形成表面处理层之前,在臭氧环境中用紫外线照射栅绝缘层的步骤。