処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2020262212 - 半導体装置

公開番号 WO/2020/262212
公開日 30.12.2020
国際出願番号 PCT/JP2020/024058
国際出願日 19.06.2020
IPC
H01L 23/48 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
48動作中の固体本体からまたは固体本体へ電流を導く装置,例.リードまたは端子装置
H01L 25/07 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 25/18 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
H02M 3/155 2006.1
H電気
02電力の発電,変換,配電
M交流-交流,交流-直流または直流-直流変換装置,および主要な,または類似の電力供給システムと共に使用するための装置:直流または交流入力-サージ出力変換;そのための制御または調整
3直流入力一直流出力変換
02中間に交流変換をもたないもの
04静止型変換器によるもの
10制御電極を有する放電管または制御電極を有する半導体装置を使用するもの
145制御信号の連続的印加を必要とする三極管またはトランジスタ型式の装置を用いるもの
155半導体装置のみを用いるもの
CPC
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
H01L 2224/40225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
39Structure, shape, material or disposition of the strap connectors after the connecting process
40of an individual strap connector
401Disposition
40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
40221the body and the item being stacked
40225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2224/48247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48245the item being metallic
48247connecting the wire to a bond pad of the item
H01L 2224/4903
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
4901Structure
4903Connectors having different sizes, e.g. different diameters
H01L 2224/49111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
4911the connectors being bonded to at least one common bonding area, e.g. daisy chain
49111the connectors connecting two common bonding areas, e.g. Litz or braid wires
出願人
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP]
発明者
  • 坂入 寛之 SAKAIRI Hiroyuki
  • 中小原 佑輔 NAKAKOHARA Yusuke
  • 中原 健 NAKAHARA Ken
代理人
  • 臼井 尚 USUI Takashi
  • 鈴木 泰光 SUZUKI Yasumitsu
優先権情報
2019-11662224.06.2019JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
要約
(EN) This semiconductor device is provided with: a conductive member including first conductors, second conductors, and third conductors which are spaced apart from each other; a first semiconductor element having a first major surface on which a first drain electrode, a first source electrode, and a first gate electrode are disposed; and a second semiconductor element having a second major surface on which a second drain electrode, a second source electrode, and a second gate electrode are disposed. The first conductors are in conduction with the first source electrode and the second drain electrode. The second conductors are in conduction with the second source electrode and, when viewed in a first direction perpendicular to the first major surface, are adjacent to each other in a second direction perpendicular to the first direction. The third conductors are in conduction with the first drain electrode and, when viewed in the first direction, are adjacent to the first conductors and the second conductors.
(FR) L'invention concerne un dispositif à semi-conducteur comportant : un élément conducteur comprenant des premiers conducteurs, des deuxièmes conducteurs et des troisièmes conducteurs qui sont espacés les uns des autres ; un premier élément semi-conducteur ayant une première surface principale sur laquelle sont disposées une première électrode drain, une première électrode source et une première électrode grille ; et un second élément semi-conducteur ayant une seconde surface principale sur laquelle sont disposées une seconde électrode drain, une seconde électrode source et une seconde électrode grille. Les premiers conducteurs sont en conduction avec la première électrode source et la seconde électrode drain. Les deuxièmes conducteurs sont en conduction avec la seconde électrode source et, lorsqu'ils sont vus dans une première direction perpendiculaire à la première surface principale, sont adjacents les uns aux autres dans une seconde direction perpendiculaire à la première direction. Les troisièmes conducteurs sont en conduction avec la première électrode drain et, lorsqu'ils sont vus dans la première direction, sont adjacents aux premiers conducteurs et aux deuxièmes conducteurs.
(JA) 半導体装置は、互いに離間する第1導電体、第2導電体および第3導電体を含む導電性部材と、第1主面を有し、当該第1主面に第1ドレイン電極、第1ソース電極および第1ゲート電極が配置された第1半導体素子と、第2主面を有し、当該第2主面に第2ドレイン電極、第2ソース電極および第2ゲート電極が配置された第2半導体素子と、を備える。前記第1導電体は、前記第1ソース電極および前記第2ドレイン電極に導通する。前記第2導電体は、前記第2ソース電極に導通しており、かつ、前記第1主面に直交する第1方向に見て、前記第1方向に直交する第2方向に隣り合う。前記第3導電体は、前記第1ドレイン電極に導通しており、かつ、前記第1方向に見て、前記第1導電体および前記第2導電体のそれぞれに隣り合う。
国際事務局に記録されている最新の書誌情報